Memory system, memory controller and method for operating memory system
AssigneeSK hynix Inc.
InventorSu-Kyung Kim
Life of this patent
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Abstract
A memory system, a memory controller and a method for operating a memory system are disclosed. Specifically, by performing soft-decision decoding for data read from some of the plurality of memory cells based on a first optimum read voltage of one or more optimum read voltages, based on reliability values of one or more first threshold voltage sections, and one or more second threshold voltage sections and also based on the first and second threshold voltage sections, it is possible to provide a memory system, a memory controller and a method for operating a memory system, capable of increasing an error correction effect by soft-decision decoding even in the case where threshold voltage distributions of memory cells in which data is stored are degraded.
Claims20
A memory system comprising:
- a memory device comprising a plurality of memory cells;
- and
- a memory controller configured to control the memory device,
- wherein the memory controller is further configured to perform soft-decision decoding for data read from some of the plurality of memory cells based on a first optimum read voltage of one or more optimum read voltages, based on reliability values of one or more first threshold voltage sections and one or more second threshold voltage sections, and also based on the first and second threshold voltage sections,
- wherein the one or more first threshold voltage sections are determined by read voltages which are lower than the first optimum read voltage, and the one or more second threshold voltage sections are determined by read voltages which are higher than the first optimum read voltage,
- wherein the memory controller is further configured to determine a size of the one or more first threshold voltage sections to be different than a size of the one or more second threshold voltage sections, and
- wherein the size of two or more of the first threshold voltage sections is the same, and the size of two or more of the second threshold voltage sections is the same.
A memory controller comprising:
- a memory interface configured to communicate with a memory device comprising a plurality of memory cells;
- and
- a control circuit configured to control the memory device,
- wherein the control circuit is further configured to perform soft-decision decoding for data read from some among the plurality of memory cells based on a first optimum read voltage which is one among one or more optimum read voltages, based on reliability values of one or more first threshold voltage sections and one or more second threshold voltage sections and also based on the first and second threshold voltage sections,
- wherein the one or more first threshold voltage sections are determined by read voltages which are lower than the first optimum read voltage, and the one or more second threshold voltage sections are determined by read voltages, which are higher than the first optimum read voltage,
- wherein the control circuit is further configured to determine a size of the one or more first threshold voltage sections to be different than a size of the one or more second threshold voltage sections, and
- wherein the size of two or more of the first threshold voltage sections is the same, and the size of two or more of the second threshold voltage sections is the same.
A method for operating a memory system comprising a memory device comprising a plurality of memory cells and a memory controller configured to control the memory device, the method comprising:
- reading data from some among the plurality of memory cells based on a first optimum read voltage which is one among one or more optimum read voltages;
- and
- performing soft-decision decoding, based on reliability values of one or more first threshold voltage sections and one or more second threshold voltage sections and also based on the first and second threshold voltage sections,
- wherein the one or more first threshold voltage sections are determined by read voltages, which are lower than the first optimum read voltage, and the one or more second threshold voltage sections are determined by read voltages, which are higher than the first optimum read voltage, and
- further comprising determining a size of the one or more first threshold voltage sections to be different than a size of the one or more second threshold voltage sections,
- wherein the size of two or more of the first threshold voltage sections is the same, and the size of two or more of the second threshold voltage sections is the same.
Dependencies are inferred from the claim text.