Storage element, semiconductor device, magnetic recording array, and method of producing storage element

A storage element, comprising:

• a first ferromagnetic layer;
• a second ferromagnetic layer;
• a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction;
• a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction;
• an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction;
• and
• a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode,
• wherein the electrode has a first conductive part and a second conductive part from a position close to the second ferromagnetic layer in that order,
• wherein the second conductive part has a higher conductivity than the first conductive part, and
• wherein the compound part is positioned between the first conductive part and the second conductive part.