One time programmable anti-fuse physical unclonable function
AssigneeSynopsys, Inc.
InventorXiaojun Lu
Life of this patent
Estimating the term…
Abstract
A method includes performing a first read operation on a memory cell of a programmed first one-time programmable (OTP) anti-fuse to determine a state of the memory cell based on a first parameter level, performing a second read operation on the memory cell of the programmed first OTP anti-fuse to determine the state of the memory cell based on a second parameter level, identifying the memory cell of the first OTP anti-fuse as an uncertain bit when the state determined during the first read operation and the state determined during the second read operation are different, and programing one or more memory cells of a second OTP anti-fuse based on a bit position of the identified uncertain bit of the first OTP anti-fuse.
Claims20
A method, comprising:
- performing, by one or more computer devices, a first read operation on a memory cell of a programmed first one-time programmable (OTP) anti-fuse to determine a first state of the memory cell based on a first parameter level;
- performing, by the one or more computer devices, a second read operation on the memory cell of the programmed first OTP anti-fuse to determine a second state of the memory cell based on a second parameter level;
- identifying, by the one or more computer devices, the memory cell of the programmed first OTP anti-fuse as an uncertain bit when the first state determined during the first read operation and the second state determined during the second read operation are different;
- and
- programing, by the one or more computer devices, one or more memory cells of a second OTP anti-fuse based on a bit position of the identified uncertain bit of the first OTP anti-fuse.
A method comprising:
- performing, by one or more computer devices, a first read operation on a first plurality of memory cells of a first one-time programmable (OTP) anti-fuse;
- performing, by the one or more computer devices, a second read operation on a second plurality of memory cells of a second OTP anti-fuse to determine a programming state of the second plurality of memory cells of the second OTP anti-fuse;
- and
- masking, by the one or more computer devices, a portion of the first plurality of memory cells of the first OTP anti-fuse based on the second read operation, wherein the masked memory cells are based on the programming state of the second plurality of memory cells in the second OTP anti-fuse.
A system comprising:
- a memory storing instructions;
- a first one-time programmable (OTP) anti-fuse;
- a second OTP anti-fuse;
- and
- a processor, coupled with the memory and configured to execute the instructions, the instructions when executed cause the processor to perform operations comprising:
- programming a memory cell of the first OTP anti-fuse to provide a programmed first OTP anti-fuse;
- perform a first read operation on the memory cell of the programmed first OTP anti-fuse to determine a state of the memory cell based on a first parameter level,
- perform a second read operation on the memory cell of the programmed first OTP anti-fuse to determine a state of the memory cell based on a second parameter level,
- identify the memory cell of the programmed first OTP anti-fuse as an uncertain bit when the state determined during the first read operation and the state determined during the second read operation are different, and
- program one or more memory cells of the second OTP anti-fuse based on a bit position of the identified uncertain bit of the programmed first OTP anti-fuse.
Dependencies are inferred from the claim text.