Nonvolatile memory device and memory system including nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsBeomkyu Shin, Sungkyu Park
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.
Claims20
A nonvolatile memory device comprising:
- a memory cell block including a plurality of memory cells;
- and
- a peripheral block configured to receive first write data to be written in the memory cells from an external device and to perform a compare and write operation on the memory cells by using the first write data,
- wherein the peripheral block performs the compare and write operation by:
- reading read data from the memory cells;
- inverting the first write data to generate second write data;
- adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data;
- performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data;
- comparing the read data with the fifth write data to generate a first result;
- comparing the read data with the sixth write data to generate a second result;
- and
- writing one of the fifth and sixth write data in the memory cells based on the first result and the second result,
- wherein the compare and write operation performs a single read corresponding to the reading of the read data and a single write, after the single read, corresponding to the writing of the fifth or sixth write data.
A memory system comprising:
- a nonvolatile memory device including a plurality memory cells;
- and
- a controller configured to perform a compare and write operation on the memory cells by using first write data to be written in the memory cells,
- wherein the controller performs the compare and write operation by:
- reading read data from the memory cells;
- inverting the first write data to generate second write data;
- adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data;
- performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data;
- and
- comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison,
- wherein the compare and write operation performs a single read corresponding to the reading of the read data and a single write, after the single read, corresponding to the writing of the fifth or sixth write data.
A memory system comprising:
- a nonvolatile memory device including a plurality of memory cells;
- and
- a controller configured to perform a compare and write operation on the memory cells by using first write data to be written in the memory cells,
- wherein the controller performs the compare and write operation by:
- reading read data from the memory cells;
- performing a first encoding on the first write data to generate second write data;
- performing a second encoding on the second write data to generate third write data;
- inverting the third write data to generate fourth write data;
- adding a first flag bit to the third write data to generate fifth write data and adding a second flag bit to the fourth write data to generate sixth write data;
- and
- comparing the read data with the fifth write data to generate a first result;
- comparing the read data with the sixth write data to generate a second result;
- and
- writing one of the fifth and sixth write data in the memory cells based on the first result and the second result,
- wherein the compare and write operation performs a single read corresponding to the reading of the read data and a single write, after the single read, corresponding to the writing of the fifth or sixth write data.
Dependencies are inferred from the claim text.