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US 11,144,245 B2Granted
Memory control method, memory storage device and memory control circuit unit
AssigneePhison Electronics Corp.
InventorChe-Yueh Kuo
Life of this patent
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Abstract
A memory control method is disclosed. The method includes: determining a mode for reading first data in a first management unit as a first mode or a second mode according to a data dispersion degree of the first data; reading the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode; and reading the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode. Furthermore, a memory storage device and a memory control circuit unit are also disclosed.
Claims21
A memory control method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units, and the memory control method comprises:
- determining a mode for reading first data in a first management unit among the plurality of management units as a first mode or a second mode according to a data dispersion degree of the first data;
- reading the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode;
- and
- reading the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode,
- wherein the step of determining the mode for reading the first data as the first mode or the second mode according to the data dispersion degree of the first data comprises:
- determining the mode for reading the first data as the first mode or the second mode according to counting information, wherein the counting information reflects a total number of at least one management table corresponding to the first data,
- wherein the step of determining the mode for reading the first data as the first mode or the second mode according to the counting information comprises:
- determining the mode for reading the first data as the first mode if the counting information is greater than a threshold value;
- and
- determining the mode for reading the first data as the second mode if the counting information is less than the threshold value.
7 more elements
A memory storage device, comprising:
- a connection interface unit, configured to couple to a host system;
- a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units;
- and
- a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
- wherein the memory control circuit unit is configured to determine a mode for reading first data in a first management unit among the plurality of management units as a first mode or a second mode according to a data dispersion degree of the first data,
- the memory control circuit unit is further configured to send a first read command sequence to instruct a reading of the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode, and
- the memory control circuit unit is further configured to send a second read command sequence to instruct a reading of the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode,
- wherein the operation that the memory control circuit unit determines the mode for reading the first data as the first mode or the second mode according to the data dispersion degree of the first data comprises:
- determining the mode for reading the first data as the first mode or the second mode according to counting information, wherein the counting information reflects a total number of at least one management table corresponding to the first data,
- wherein the operation that the memory control circuit unit determines the mode for reading the first data as the first mode or the second mode according to the counting information comprises:
- determining the mode for reading the first data as the first mode if the counting information is greater than a threshold value;
- and
- determining the mode for reading the first data as the second mode if the counting information is less than the threshold value.
10 more elements
A memory control circuit unit for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units, and the memory control circuit unit comprises:
- a host interface, configured to couple to a host system;
- a memory interface, configured to couple to the rewritable non-volatile memory module;
- and
- a memory management circuit, coupled to the host interface and the memory interface,
- wherein the memory management circuit is configured to determine a mode for reading first data in a first management unit among the plurality of management units as a first mode or a second mode according to a data dispersion degree of the first data,
- the memory management circuit is further configured to send a first read command sequence to instruct a reading of the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode, and
- the memory management circuit is further configured to send a second read command sequence to instruct a reading of the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode,
- wherein the operation that the memory management circuit determines the mode for reading the first data as the first mode or the second mode according to the data dispersion degree of the first data comprises:
- determining the mode for reading the first data as the first mode or the second mode according to counting information, wherein the counting information reflects a total number of at least one management table corresponding to the first data,
- wherein the operation that the memory management circuit determines the mode for reading the first data as the first mode or the second mode according to the counting information comprises:
- determining the mode for reading the first data as the first mode if the counting information is greater than a threshold value;
- and
- determining the mode for reading the first data as the second mode if the counting information is less than the threshold value.
10 more elements
A memory control method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units, and the memory control method comprises:
- determining a mode for reading first data in a first management unit among the plurality of management units as a first mode or a second mode according to a data dispersion degree of the first data;
- reading the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode;
- and
- reading the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode,
- wherein the step of determining the mode for reading the first data as the first mode or the second mode according to the data dispersion degree of the first data comprises:
- determining the mode for reading the first data as the first mode or the second mode according to counting information, wherein the counting information reflects a total number of at least one management table corresponding to the first data,
- wherein the memory control method further comprises:
- obtaining table bit map information corresponding to the first management unit;
- counting a total number of a first bit in the table bit map information;
- and
- determining the counting information according to the total number of the first bit.
8 more elements
A memory storage device, comprising:
- a connection interface unit, configured to couple to a host system;
- a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units;
- and
- a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
- wherein the memory control circuit unit is configured to determine a mode for reading first data in a first management unit among the plurality of management units as a first mode or a second mode according to a data dispersion degree of the first data,
- the memory control circuit unit is further configured to send a first read command sequence to instruct a reading of the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode, and
- the memory control circuit unit is further configured to send a second read command sequence to instruct a reading of the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode,
- wherein the operation that the memory control circuit unit determines the mode for reading the first data as the first mode or the second mode according to the data dispersion degree of the first data comprises:
- determining the mode for reading the first data as the first mode or the second mode according to counting information, wherein the counting information reflects a total number of at least one management table corresponding to the first data, wherein the memory control circuit unit is further configured to:
- obtain table bit map information corresponding to the first management unit;
- count a total number of a first bit in the table bit map information;
- and
- determine the counting information according to the total number of the first bit.
10 more elements
A memory control circuit unit for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units, and the memory control circuit unit comprises:
- a host interface, configured to couple to a host system;
- a memory interface, configured to couple to the rewritable non-volatile memory module;
- and
- a memory management circuit, coupled to the host interface and the memory interface,
- wherein the memory management circuit is configured to determine a mode for reading first data in a first management unit among the plurality of management units as a first mode or a second mode according to a data dispersion degree of the first data,
- the memory management circuit is further configured to send a first read command sequence to instruct a reading of the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode, and
- the memory management circuit is further configured to send a second read command sequence to instruct a reading of the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode,
- wherein the operation that the memory management circuit determines the mode for reading the first data as the first mode or the second mode according to the data dispersion degree of the first data comprises:
- determining the mode for reading the first data as the first mode or the second mode according to counting information, wherein the counting information reflects a total number of at least one management table corresponding to the first data,
- wherein the memory management circuit is further configured to:
- obtain table bit map information corresponding to the first management unit;
- count a total number of a first bit in the table bit map information;
- and
- determine the counting information according to the total number of the first bit.
11 more elements
Dependencies are inferred from the claim text.