Resist composition

A method of fabricating an integrated circuit die or an integrated circuit wafer comprising a plurality of integrated circuit dice, the or each die comprising a plurality of electronic components, wherein the method comprises:

• i) applying a resist coating to a substrate;
• ii) exposing part(s) of the resist coating to radiation to provide an exposed resist coating;
• iii) developing the exposed resist coating to generate a resist pattern layer, the resist pattern layer comprising:
• developer-insoluble coating portions of the resist coating;
• and an array of grooves extending through the resist pattern layer;
• iv) modifying the substrate, substrate surface, or part(s) thereof, underlying the resist pattern layer;
• v) removing the resist pattern layer to provide a modified substrate;
• vi) optionally repeating, one or more times, step iv) and/or steps i)-v) with either the resist coating or an alternative resist coating;
• and optionally using alternative radiation during exposure upon the modified substrate;
• vii) optionally conductively interconnecting the electronic components of the or each die with conductor(s) if not already performed during one or more substrate/substrate-surface modifying steps to provide an integrated circuit with external contact terminals;
• viii) optionally performing one or more further finishing steps;
• ix) optionally separating an integrated circuit die from a wafer comprising a plurality of integrated circuit dice;
• wherein step (i) of the method is optionally preceded by performing steps (i) to (vi) of this method, optionally repeated one or more times, using either the resist coating of the invention or an alternative resist coating;
• wherein the resist coating comprises an optionally dried and/or cured resist composition;
• wherein the resist composition comprises an anti-scattering component and a resist component, wherein the anti-scattering component comprises a primary metal complex (PMC) that is a polymetallic metal-organic complex characterized by a polymetallic cage and/or a polymetallic ring system comprising one or more types of metal species coordinated to one or more ligands, where boron and silicon are not metal species, wherein either:
• (a) the anti-scattering component is the resist component;
• (b) the anti-scattering component comprises the resist component such that the resist component is part of the anti-scattering component or is mutually associated or connected therewith, whether chemically and/or physically, by way of bonding;
• or
• (c) the resist component is a separate compound from the anti-scattering component.