Total-reflection infrared reflection device and preparation method thereof

A preparation method for the total-reflection infrared reflection device, comprising:

• preparing or taking two light-transmitting conductive substrates;
• preparing the parallel alignment layers on one surface of the two light-transmitting conductive substrates;
• preparing a first liquid crystal mixture and a second liquid crystal mixture, wherein the first liquid crystal mixture comprises a negative liquid crystal, a liquid crystal monomer, a left-handed chiral dopant, a photoinitiator and a polymerization inhibitor, and the second liquid crystal mixture comprises a negative liquid crystal, a liquid crystal monomer, a right-handed chiral dopant, a photoinitiator and a polymerization inhibitor;
• heating the first liquid crystal mixture and the second liquid crystal mixture to 70° C., then respectively coating the first liquid crystal mixture and the second liquid crystal mixture on the parallel alignment layers of the two light-transmitting conductive substrates, and after the coating is completed, a temperature is cooled to a room temperature, and the temperature is kept for 30 min, irradiating the first liquid crystal mixture and the second liquid crystal mixture by ultraviolet light, and polymerizing the liquid crystal monomer to form a polymer network;
• cleaning the two light-transmitting conductive substrates, removing the left-handed chiral dopant, the right-handed chiral dopant, the photoinitiator, the polymerization inhibitor, the negative liquid crystal and the unpolymerized monomer, and drying;
• oppositely disposing the surfaces of the two light-transmitting conductive substrates coated with the polymer networks, and packaging the two light-transmitting conductive substrates to form a liquid crystal box;
• and
• filling the negative liquid crystal into all liquid crystal boxes.