Multi-mode interference (MMI) based laser devices for heterogeneous platforms

A method for forming a semiconductor photonic device, comprising:

• forming a 1×3 multi-mode interference (MMI) coupler with an output port at a first side of the MMI coupler, and three input ports at a second side of the MMI coupler opposite to the first side, wherein the MMI coupler is within a semiconductor layer above a substrate;
• forming, within the semiconductor layer, a front arm coupled to the output port of the MMI coupler and terminated by a front reflector, including coupling the output port with the front reflector via a waveguide;
• integrating a photodetector into the waveguide between the front reflector and the output port to monitor power at the output port;
• forming, within the semiconductor layer, a coarse tuning arm coupled to a first input port of the MIMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm coupled to a second input port of the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a side-mode suppression ratio (SMSR) and power tuning arm coupled to a third input port of the MMI coupler and terminated by a third back reflector;
• forming a gain region in an III-V material layer including an III-V material above the semiconductor layer, wherein the gain region is above the front arm;
• and
• disposing a metal layer above the gain region, wherein the metal layer includes one or more metal heaters, including disposing the one or more metal heaters directly above the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm in order to act as phase tuners for the semiconductor photonic device.

An optical communication system comprising at least one optical apparatus, wherein the optical apparatus includes a single mode laser device, and the single mode laser device includes:

• a substrate;
• a gain region above the substrate, wherein the gain region includes an III-V material;
• a semiconductor layer above the substrate and below the gain region, wherein the semiconductor layer includes:
• a 1×3 multi-mode interference (MIMI) coupler,
• a front arm coupled to the MMI coupler and terminated by a front reflector at a first side of the MIMI coupler,
• a coarse tuning arm terminated by a first back reflector for coarse wavelength tuning,
• a fine tuning arm terminated by a second back reflector for fine wavelength tuning, and a side-mode suppression ratio (SMSR) and power tuning arm terminated by a third back reflector, wherein the gain region is above the front arm, and wherein the coarse tuning arm, the fine tuning arm, and the SMSR and power tuning arm are coupled to the MMI coupler at a second side of the MIMI coupler opposite to the first side;
• an output port coupled to the front reflector via a waveguide;
• and
• a photodetector integrated into the waveguide between the front reflector and the output port to monitor power at the output port;
• and
• a metal layer disposed above the gain region, wherein the metal layer includes one or more metal heaters, wherein the one or more metal heaters are disposed directly above the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm in order to act as phase tuners for the optical apparatus.