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US 11,143,817 B2Granted
Semiconductor structure and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Chang Chang, Chung-Yen Chou, Ming-Chyi Liu, Shih-Chang Liu
Life of this patent
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Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.
Claims20
A semiconductor structure, comprising:
- a gate element, the gate element including:
- a gate dielectric layer;
- and
- a gate electrode over the gate dielectric layer;
- an insulation layer over and covering a top surface and sidewalls of the gate element, and a bottom of the insulation layer is coplanar with a bottom of the gate element;
- and
- a waveguide passing the insulation layer and further passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode, and further extending into the gate dielectric layer without passing through the gate dielectric layer.
4 more elements
A semiconductor structure, comprising:
- a substrate;
- an insulation layer over the substrate;
- and
- a waveguide over the substrate;
- and
- wherein a sidewall of the waveguide is encompassed by a gate element and the insulation layer, and the gate element includes a gate dielectric layer, a gate electrode and a pair of spacers along sidewalls of the gate dielectric layer and the gate electrode, wherein the insulation layer covers a top surface and sidewalls of the gate element, and a bottom of the insulation layer is coplanar with a bottom of the gate element, and the gate dielectric layer includes a recessed region, and the waveguide fills the recessed region, and the waveguide is separated from the substrate by the gate dielectric layer.
3 more elements
A semiconductor structure, comprising:
- a gate element over a grating coupler for coupling a laser signal, wherein the gate element includes:
- a gate dielectric layer;
- and
- a gate electrode over the gate dielectric layer;
- an insulation layer over and covering a top surface and sidewalls of the gate element, and a bottom of the insulation layer is coplanar with a bottom of the gate element;
- and
- a cavity allowing the laser signal passing through the insulation layer and the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode, and the cavity further extending into the gate dielectric layer without passing through the gate dielectric layer.
4 more elements
Dependencies are inferred from the claim text.