Preparation process for graphene resonant gas sensor based on doped metal atoms
AssigneeJiangsu University
InventorsQuan Wang, Jiangtao Wang
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Abstract
The present disclosure belongs to the technical field of sensors, relates to a graphene resonant gas sensor, and in particular, to a graphene resonant gas sensor based on doped metal atoms and a preparation process therefor. In the present disclosure, the metal atoms are embedded in a graphene resonant beam, and a transition metal layer may use the doped metal atoms as anchor points to be tightly adsorbed to the surface of the graphene resonant beam, so that the quality of surface contact between the transition metal layer and the graphene resonant beam is improved, and the problems such as low quality and low sensitivity of conventional resonant gas sensors are effectively solved.
Claims17
A preparation process for a graphene resonant gas sensor based on doped metal atoms, comprising the following steps:
- step 1:
- depositing a SiO2 dielectric layer (2) on a Si substrate (1) by a chemical vapor deposition method, and then performing an ultrasonic cleaning on the SiO2 dielectric layer by using absolute ethanol and deionized water;
- step 2:
- spin-coating a PPA (3) on a surface of the SiO2 dielectric layer (2), and etching three rectangular grooves in the PPA (3) by using a direct writing machine having a nano 3D structure;
- first depositing a layer of Ti and then depositing a layer of Au—Pt alloy material in each of the rectangular grooves by using an electron beam evaporation technique, and upon completion of the deposition, removing remaining PPA (3) by using the direct writing machine having the nano 3D structure, wherein obtained metal blocks serve as a source metal electrode (4), a gate metal electrode (5), and a drain metal electrode (6) in turn;
- step 3:
- cutting away a part of the gate metal electrode (5) by using a focused ion beam, so that a height difference is generated between the gate metal electrode (5) and the source metal electrode (4) and the drain metal electrode (6);
- step 4:
- preparing a single-layer graphene film (7) by using a mechanical exfoliation method, preparing n C-atom vacancies step by step in the graphene film (7) by using a transmission electron microscope, wherein the C-atom vacancies are located in a range having a diameter of 10 to 20 nm from a center of the graphene film (7), spin-coating the PPA on a surface of the graphene film (7), etching a circular through-hole in the PPA by using the direct writing machine having the nano 3D structure, wherein the through-hole is located above the C-atom vacancies, depositing a metal material in the circular through-hole by EBE to serve as a transition layer metal (9), removing remaining PPA by using the direct writing machine having the nano 3D structure, and finally cutting out a required size of a graphene resonant beam (8) through the focused ion beam, so that the deposited transition layer metal (9) is located at a central position of the graphene resonant beam (8);
- step 5:
- transferring the graphene resonant beam (8) obtained in step 4 to a place above the source metal electrode (4) and the drain metal electrode (6) by a wet transfer method;
- and
- step 6:
- modifying a polymer coating (10) on the transition layer metal (9) of the graphene resonant beam (8) to obtain the graphene resonant gas sensor based on doped metal atoms.
Dependencies are inferred from the claim text.