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US 11,142,844 B2Granted
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
AssigneeGlobalWafers Co., Ltd.
InventorsSoubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Life of this patent
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Abstract
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.
Claims45
A single crystal silicon wafer comprising:
- two major, parallel surfaces, one of which is a front surface of the single crystal silicon wafer and the other of which is a back surface of the single crystal silicon wafer, a circumferential edge joining the front and back surfaces of the single crystal silicon wafer, a bulk region between the front and back surfaces, and a central plane of the single crystal silicon wafer between the front and back surfaces of the single crystal silicon wafer, wherein:
- (a) the bulk region comprises a combination of nitrogen at a concentration of at least about 1×1014 atoms/cm3 and germanium at a concentration of at least about 1×1019 atoms/m3;
- (b) the bulk region comprises interstitial oxygen at a concentration of less than about 6 ppma (New ASTM:
- ASTM F 121, 1980-1983;
- DIN 50438/1, 1978);
- and
- (c) the bulk region of the single crystal silicon wafer has a resistivity of at least about 1000 ohm cm.
4 more elements
A method of growing a single crystal silicon ingot, the method comprising:
- preparing a silicon melt, wherein the silicon melt is prepared by melting polycrystalline silicon in a quartz lined crucible and adding a source of an impurity to the quartz lined crucible, the impurity comprising germanium, nitrogen, or a combination of germanium and nitrogen;
- and
- pulling the single crystal silicon ingot from the silicon melt, the single crystal silicon ingot comprising a central axis, a crown, an end opposite the crown, and a main body between the crown and the opposite end, the main body having a lateral surface and a radius, R, extending from the central axis to the lateral surface, wherein the main body of the single crystal silicon ingot comprises a combination of nitrogen at a concentration of at least about 1×1014 atoms/cm3 and germanium at a concentration of at least about 1×1019 atoms/cm3, further wherein the pulling conditions are sufficient to yield a concentration of interstitial oxygen in the main body of the single crystal silicon ingot of less than about 6 ppma (New ASTM:
- ASTM F 121, 1980-1983;
- DIN 50438/1, 1978), and further wherein the main body of the single crystal silicon ingot has a resistivity of at least about 1000 ohm cm.
2 more elements
A single crystal silicon ingot comprising:
- a central axis, a crown, an end opposite the crown, and a main body between the crown and the opposite end, the main body having a lateral surface and a radius, R, extending from the central axis to the lateral surface, wherein:
- (a) the main body of the single crystal silicon ingot comprises a combination of nitrogen at a concentration of at least about 1×1014 atoms/cm3 and germanium at a concentration of at least about 1×1019 atoms/cm3;
- (b) the main body of the single crystal silicon ingot comprises interstitial oxygen at a concentration of less than about 6 ppma (New ASTM:
- ASTM F 121, 1980-1983;
- DIN 50438/1, 1978);
- and
- (c) the main body of the single crystal silicon ingot has a resistivity of at least about 1000 ohm cm.
4 more elements
Dependencies are inferred from the claim text.