Semiconductor manufacturing apparatus member, and display manufacturing apparatus and semiconductor manufacturing apparatus comprising semiconductor manufacturing apparatus member

#This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-33546, filed on Feb. 27, 2019, and No. 2019-222021, filed on Dec. 9, 2019; the entire contents of which are incorporated herein by reference.

#Embodiments described herein relate generally to a semiconductor manufacturing apparatus member, and a display manufacturing apparatus and a semiconductor manufacturing apparatus comprising semiconductor manufacturing apparatus member.

#A semiconductor manufacturing apparatus is used in a manufacturing process of a semiconductor device to perform processing such as dry etching, sputtering, CVD (Chemical Vapor Deposition), etc., in a chamber. Particles may be generated in the chamber from a patterning object, the interior wall of the chamber, etc. It is desirable to reduce such particles because the particles cause a reduction of the yield of the semiconductor device to be manufactured.

#FIG. 1 is a cross-sectional view illustrating a semiconductor manufacturing apparatus including a semiconductor manufacturing apparatus member according to an embodiment;

#FIG. 2 is a cross-sectional view illustrating the semiconductor manufacturing apparatus member according to the embodiment; and

#FIG. 3 is a schematic view illustrating the structure of the alumite layer of the semiconductor manufacturing apparatus member according to the embodiment.

#A semiconductor manufacturing apparatus member according to the invention includes a base and a particle-resistant layer; the base includes a main portion including aluminum, and an alumite layer provided at a front surface of the main portion; the particle-resistant layer is provided on the alumite layer and includes a polycrystalline ceramic; and an Al purity of the main portion is 99.00% or more.

#The inventors discovered that there is an association between the Al purity of the main portion and the particle resistance of the particle-resistant layer. In the semiconductor manufacturing apparatus member according to the invention, the Al purity of the main portion is set to 99.00% or more; and a high level of particle resistance can be provided.

#In the semiconductor manufacturing apparatus member according to the invention, it is also favorable for the thickness of the particle-resistant layer to be less than the thickness of the alumite layer.