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US 11,142,824 B2Granted
Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others
AssigneeUchicago Argonne, LLC
InventorsAnil U. Mane, Devika Choudhury, Jeffrey W. Elam, Steven Payonk Letourneau
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Abstract
An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.
Claims16
A method of preparing a substrate comprising:
- depositing a seed layer on the substrate, the seed layer comprising AlMoF;
- forming an ultra-thin transition metal layer by:
- performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100° C. and 300° C., and
- performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50° C. and 300° C., and
- forming a transition metal dichalcogenide by sulphurization of the ultra-thin transition metal layer by exposure to a sulfur precursor.
2 more elements
A method of preparing a substrate comprising:
- depositing a seed layer on the substrate, the seed layer comprising AlMoF;
- forming a transition metal layer of x atomic layers by repeating x times a atomic layer deposition process having the steps of:
- performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100° C. and 300° C., and
- performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50° C. and 300° C., and
- converting the transition metal layer to dichalcogenide by sulphurization of the transition metal layer at a temperature of at least greater than or equal to 300° C. by exposure to at least one dose of a sulfur precursor,
- wherein x is between 1 and 8.
3 more elements
Dependencies are inferred from the claim text.