Trichlorodisilane

A method of forming a silicon nitrogen-film on a substrate, the method comprising subjecting a first vapor of a silicon precursor comprising 1,1,1-trichlorodisilane and a second vapor of a nitrogen precursor comprising molecular nitrogen, ammonia, amine, hydrazine, or a combination of any two or three thereof to deposition conditions in the presence of the substrate, so as to form a silicon nitrogen film having a wet etch rate of less than 3.1 nanometers/minute when using a 500:1 HF:water solution on the substrate, wherein the substrate is heated and disposed in a deposition reactor that is configured for atomic layer deposition and has a reactor temperature of 400° C. to 800° C., the method comprising repeatedly feeding the first vapor, purging with an inert gas, feeding the second vapor into the deposition reactor, and purging with an inert gas so as to form the silicon nitrogen film on the heated substrate using atomic layer deposition, wherein the atomic layer deposition comprises plasma enhanced atomic layer deposition or thermal atomic layer deposition and wherein the feeds may be the same or different.