Plastic semiconductor material and preparation method thereof
AssigneeShanghai Institute of Ceramics, Chinese Academy of Sciences
InventorsXun Shi, Ruiheng Liu, Feng Hao, Tuo Wang
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Abstract
Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag2-δXδS1-ηYη(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.
Claims8
An inorganic semiconductor material having plastic deformability, comprising an argentite-based compound represented by the following formula (I):
- Ag2-δXδS1-ηYη (I),
- in which 0.1≤δ<0.5, and 0.1≤η<0.5,
- X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, and V, and
- Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, and F,
- wherein the inorganic semiconductor material can withstand a tensile deformation of 3% or more, a bending deformation of 13% or more, and a compression deformation of 30% or more.
Dependencies are inferred from the claim text.