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US 11,127,861 B2Granted
Multi-gate thin film transistor memory
AssigneeIntel Corporation
InventorAbhishek A. Sharma
Life of this patent
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Abstract
An embodiment includes an apparatus comprising: a thin film transistor (TFT) comprising: source and drain contacts; first and second gate contacts: a semiconductor material, comprising a channel, between the first and second gate contacts; and a first dielectric layer, between the first and second gate contacts, to fix charged particles. Other embodiments are described herein.
Claims25
An apparatus comprising:
- first and second metal layers;
- a thin film transistor (TFT) between the first and second metal layers, the TFT comprising:
- source and drain contacts;
- first and second gate contacts;
- a semiconductor material, comprising a channel, between the first and second gate contacts;
- an additional layer, between the first and second gate contacts, which includes an insulator material to fix charged particles.
3 more elements
A method comprising:
- providing a thin film transistor (TFT) between first and second metal layers, the TFT comprising:
- source and drain contacts;
- first and second gate contacts;
- a semiconductor material, comprising a channel, between the first and second gate contacts;
- a charge trap layer between the first and second gate contacts, wherein the charged trap layer includes an insulator material with fixed charged particles;
- simultaneously (a) applying a voltage to the second gate contact, but not the first gate contact, and at least one of the source and drain contacts to write a memory state to the TFT, and (b) applying a voltage to the first gate contact to read the memory state from the TFT.
3 more elements
An apparatus comprising:
- a thin film transistor (TFT) comprising:
- source and drain contacts;
- first and second gate contacts;
- a semiconductor material, comprising a channel, between the first and second gate contacts;
- a first dielectric layer, between the first and second gate contacts, to fix charged particles.
2 more elements
Dependencies are inferred from the claim text.