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US 11,125,836 B2Granted
Magnetic sensor manufacturing
AssigneeSeagate Technology LLC
InventorsQing He, Wonjoon Jung, Mark William Covington, Mark Thomas Kief, Yonghua Chen
Life of this patent
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Abstract
A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.
Claims6
A read head comprising:
- a first shield layer;
- a second shield layer;
- a sensor stack located between the first shield layer and the second shield layer, the sensor stack including layers that are each individually annealed after deposition and prior to deposition of a subsequent layer, the layers including:
- an MgO barrier layer comprising a homogenous MgO structure that provides a magnetic tunnel junction (MTJ), the MgO barrier layer annealed after deposition and cryo-cooled after annealing and before another layer is deposited on the MgO barrier layer;
- an additional layer deposited on the MgO barrier layer;
- and
- a cap layer deposited on the additional layer.
4 more elements
Dependencies are inferred from the claim text.