Ceria removal compositions
AssigneeEntegris, Inc.
InventorsAtanu K. Das, Michael White, Daniela White
Life of this patent
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Abstract
The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.
Claims20
A composition having a pH of about 1 to about 6, comprising:
- (a) a cerium-oxygen bond breaking compound;
- (b) a pH adjustor;
- (c) at least one cleaning agent;
- (d) a ceria complexing compound selected from tartaric acid, acetyl acetone, glutamic acid, adipic acid, betaine, nitrilo triacetic acid, iminodiacetic acid (IDA), etidronic acid (HEDP), and amino tris(methylenephosphonic acid);
- and
- (e) water,
- wherein the pH of the composition is about 1 to about 6.
A method for complexing ceria which comprises admixing therewith a ceria complexing compound selected from tartaric acid, acetyl acetone, glutamic acid, adipic acid, betaine, nitrilo triacetic acid, iminodiacetic acid (IDA), etidronic acid (HEDP), and amino tris(methylenephosphonic acid) at a pH of about 4 to about 6.
A composition having a pH of about 1 to about 6, comprising:
- (a) a cerium-oxygen bond breaking compound;
- (b) a pH adjustor;
- (c) at least one cleaning agent;
- (d) a ceria complexing compound selected from acetyl acetone, betaine, nitrilo triacetic acid, and amino tris(methylenephosphonic acid);
- and
- (e) water.
Dependencies are inferred from the claim text.