# US 11,122,656 B1 · Application structure of gallium nitride field-effect transistor in dimmer circuit

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- Number: US 11,122,656 B1
- Document ID: US11122656B1
- Status: Granted
- Kind: B1
- Application number: 16/933,631
- Filed: 2020-07-20
- Granted: 2021-09-14
- Earliest claimed: 2020-07-20
- Assignees: Gan Power Technology Co., Ltd.
- Applicants: GaN Power Technology Co., Ltd.
- Inventors: Tsung Hsien Yen; Hsing Yeh Wang; Feng Jui Shen
- Web page: https://patentgrep.com/patent/US11122656B1

## CPC

- H05B 45/10: Controlling the intensity of the light
- H03K 17/6874: {in a symmetrical configuration}
- H03K 17/74: by the use, as active elements, of diodes (by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70)
- H05B 45/30: Driver circuits
- H05B 45/34: Voltage stabilisation; Maintaining constant voltage
- H05B 45/345: Current stabilisation; Maintaining constant current
- H05B 45/3574: Emulating the electrical or functional characteristics of incandescent lamps
- H05B 45/59: for reducing or suppressing flicker or glow effects
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)

## Abstract

An application structure of a gallium nitride field-effect transistor in a dimmer circuit is disclosed, including an LED module, a power supply circuit, a current holding circuit, and a drive circuit. The power supply circuit includes a power supply, a dimmer unit, and a rectifier circuit. The current holding circuit is electrically connected to the rectifier circuit, includes a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and is configured to provide a stable current to the dimmer unit. The first control switch is provided with a gallium nitride field-effect transistor. The drive circuit is electrically connected to the current holding circuit, includes a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and is configured to stably drive the LED module to emit light. The second control switch is provided with a gallium nitride field-effect transistor.

## Claims

### Claim 1

An application structure of a gallium nitride field-effect transistor in a dimmer circuit, comprising:
an LED module;
a power supply circuit, comprising a power supply, a dimmer unit, and a rectifier circuit that are electrically connected;
a current holding circuit, electrically connected to the rectifier circuit, comprising a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and configured to provide a stable current to the dimmer unit, wherein the first control switch is provided with a gallium nitride field-effect transistor; and
a drive circuit, electrically connected to the current holding circuit, comprising a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and configured to stably drive the LED module to emit light, wherein the second control switch is provided with a gallium nitride field-effect transistor.

### Claim 2 (depends on 1)

The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the first control switch and the second control switch separately comprise two gallium nitride field-effect transistors.

### Claim 3 (depends on 1)

The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the drive circuit is further electrically connected to a rectifier diode and a plurality of capacitors.