# US 11,122,227 B2 · Image sensor, image capturing system, and production method of image sensor

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- Number: US 11,122,227 B2
- Document ID: US11122227B2
- Status: Granted
- Kind: B2
- Application number: 16/845,964
- Filed: 2020-04-10
- Published: 2020-07-30
- Granted: 2021-09-14
- Earliest claimed: 2015-12-15
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Atsushi Toda
- Web page: https://patentgrep.com/patent/US11122227B2

## CPC

- H04N 25/705: Pixels for depth measurement, e.g. RGBZ
- G01S 7/4816: {of receivers alone}
- G01S 17/86: Combinations of lidar systems with systems other than lidar, radar or sonar, e.g. with direction finders
- G01S 17/931: of land vehicles
- G02B 5/201: {in the form of arrays}
- G02B 5/208: {for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation}
- G02B 5/26: Reflecting filters (G02B5/28 takes precedence)
- G02B 5/281: {designed for the infrared light}
- H04N 23/11: for generating image signals from visible and infrared light wavelengths
- H10F 39/024: {of coatings or optical elements}
- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/1847: {Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/8067: {Reflectors}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/811: {Interconnections}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/018: {of hybrid image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10W 72/322: {Multilayered die-attach connectors, e.g. a coating on a top surface of a core}
- H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics}
- H10W 72/357: {Multiple die-attach connectors having different materials}
- H10W 90/732: {between stacked chips}
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

## Claims

### Claim 1

An imaging device, comprising:
a first pixel unit that converts light of a first wavelength range into a first charge, wherein the first pixel unit is driven with a low drive voltage;
a second pixel unit that converts light of a second wavelength range into a second charge, wherein the second pixel unit is driven with a high drive voltage; and
a light passing element, wherein a light transmittance for the second wavelength range is higher than for the first wavelength range,
wherein the light passing element is formed between the first pixel unit and the second pixel unit in a depth direction, and
wherein the first wavelength range includes a shorter wavelength than the second wavelength range.

### Claim 2 (depends on 1)

The imaging device according to claim 1, wherein at least two first pixel units correspond to one second pixel unit.

### Claim 3 (depends on 1)

The imaging device according to claim 1, further comprising:
a first wiring layer between the first pixel unit and the light passing element in the depth direction and
a second wiring layer under the second pixel unit in the depth direction.

### Claim 4 (depends on 3)

The imaging device according to claim 3, wherein the first wiring layer includes a first wire electrically connected with a second wire of the second wiring layer by a through electrode.

### Claim 5 (depends on 1)

The imaging device according to claim 1, wherein the light passing element comprises a multilayer film.

### Claim 6 (depends on 3)

The imaging device according to claim 3, further comprising:
an optical filter on top of the first pixel unit in the depth direction.

### Claim 7 (depends on 3)

The imaging device according to claim 3, further comprising:
a semiconductor layer under the second wiring layer in the depth direction.

### Claim 8 (depends on 1)

The imaging device according to claim 1,
wherein the light of the first wavelength range comprises visible light, and
wherein the light of the second wavelength range comprises infrared light.

### Claim 9 (depends on 1)

The imaging device according to claim 1, further comprising:
at least one of a logic circuit and a memory circuit.

### Claim 10 (depends on 1)

The imaging device according to claim 1, further comprising:
a control unit that controls an overall drive state of the imaging device.