# US 11,121,708 B2 · Power module having an embedding structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,121,708 B2 - Document ID: US11121708B2 - Status: Granted - Kind: B2 - Application number: 17/140,223 - Filed: 2021-01-04 - Published: 2021-08-05 - Granted: 2021-09-14 - Earliest claimed: 2020-02-04 - Assignees: Infineon Technologies Austria AG - Applicants: Infineon Technologies Austria AG - Inventors: Danny Clavette; Bang Sup Lee - Web page: https://patentgrep.com/patent/US11121708B2 ## CPC - H02M 3/158: including plural semiconductor devices as final control devices for a single load - H03K 17/0822: {in field-effect transistor switches} - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H02M 3/1588: {comprising at least one synchronous rectifier element (H02M3/1582, H02M3/1584 take precedence)} - H03K 17/165: {by feedback from the output circuit to the control circuit} - H03K 17/6871: {the output circuit comprising more than one controlled field-effect transistor} - H05K 1/185: associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards - H10D 62/117: {Shapes of semiconductor bodies} - H10W 70/614: {the multiple chips being integrally enclosed} - H10W 90/20: Configurations of stacked chips - H02M 1/0054: {Transistor switching losses (periodically suspending operation of switching converter in low power mode H02M1/0035)} - H02M 1/008: {Plural converter units for generating at two or more independent and non-parallel outputs, e.g. systems with plural point of load switching regulators} - H02M 3/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H02M 3/157: with digital control - H05K 1/181: associated with surface mounted components - H05K 3/4697: {having cavities, e.g. for mounting components (H05K3/4691 takes precedence)} - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 70/611: {for connecting multiple chips together} - H10W 70/635: {Through-vias} - H10W 70/6528: {of the portions that connect to chips, wafers or package parts} - H10W 70/685: comprising multiple insulating layers - H10W 72/9413: {on encapsulations} - H10W 72/944: {Dispositions of multiple bond pads} - Y02B 70/10: Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y02B: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS ## Abstract A power module includes: an embedding structure comprising an electrically insulating body; a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and a second semiconductor chip comprising a lateral high-side power transistor. The lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit. The switch node is electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body. ## Claims ### Claim 1 A power module, comprising: an embedding structure comprising an electrically insulating body; a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and a second semiconductor chip comprising a lateral high-side power transistor, wherein the lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit, wherein the switch node is electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body. ### Claim 2 (depends on 1) The power module of claim 1, wherein the second semiconductor chip further comprises a first driver circuit monolithically integrated with the lateral high-side power transistor and configured to drive a control terminal of the lateral high-side power transistor. ### Claim 3 (depends on 2) The power module of claim 2, wherein the second semiconductor chip further comprises a second driver circuit monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive a control terminal of the vertical low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the vertical low-side power transistor through one or more fourth electrically conductive paths embedded in the electrically insulating body. ### Claim 4 (depends on 3) The power module of claim 3, wherein the second semiconductor chip further comprises a modulator monolithically integrated with the first driver circuit, the second driver circuit and the lateral high-side power transistor and configured to generate modulation signals for controlling switching of the lateral high-side power transistor and the vertical low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip. ### Claim 5 (depends on 1) The power module of claim 1, wherein the vertical low-side power transistor is a vertical power MOSFET, wherein gate and source terminals of the vertical power MOSFET face a second side of the electrically insulating body, and wherein a drain terminal of the vertical power MOSFET faces a first side of the electrically insulating body opposite the first side and forms part of the switch node. ### Claim 6 (depends on 5) The power module of claim 5, wherein the lateral high-side power transistor is a lateral power MOSFET, wherein gate and drain terminals of the lateral power MOSFET face the first side of the electrically insulating body, and wherein a source terminal of the lateral power MOSFET faces the first side of the electrically insulating body, forms part of the switch node and is electrically connected to the drain terminal of the vertical power MOSFET through respective electrically conductive paths embedded in the electrically insulating body between the first semiconductor chip and the first side of the electrically insulating body. ### Claim 7 (depends on 6) The power module of claim 6, wherein the source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partly overlap with one another. ### Claim 8 (depends on 1) The power module of claim 1, wherein the electrically insulating body of the embedding structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein the first semiconductor chip is arranged in the cavity. ### Claim 9 (depends on 1) The power module of claim 1, wherein the first semiconductor chip and the second semiconductor chip form a non-isolated point-of-load power converter configured to accept power input from an isolated dc-dc converter and provide dc power to a close-proximity load. ### Claim 10 An electronic system, comprising: a board; a load attached to the board; a power module attached to the board, configured to provide dc power to the load and comprising: an embedding structure comprising an electrically insulating body; a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and a second semiconductor chip comprising a lateral high-side power transistor, wherein the lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first electrically conductive paths embedded in the electrically insulating body to form a switch node of a half bridge circuit configured to supply an output voltage to the load, the switch node being electrically connected to a terminal of the embedding structure through one or more second electrically conductive paths embedded in the electrically insulating body; and a controller configured to control operation of the power module and thereby regulate the dc power provided to the load. ### Claim 11 (depends on 10) The electronic system of claim 10, wherein the second semiconductor chip further comprises a first driver circuit monolithically integrated with the lateral high-side power transistor and configured to drive a control terminal of the lateral high-side power transistor. ### Claim 12 (depends on 11) The electronic system of claim 11, wherein the second semiconductor chip further comprises a second driver circuit monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive a control terminal of the vertical low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the vertical low-side power transistor through one or more fourth electrically conductive paths embedded in the electrically insulating body. ### Claim 13 (depends on 12) The electronic system of claim 12, wherein the second semiconductor chip further comprises a modulator monolithically integrated with the first driver circuit, the second driver circuit and the lateral high-side power transistor and configured to generate modulation signals for controlling switching of the lateral high-side power transistor and the vertical low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip. ### Claim 14 (depends on 13) The electronic system of claim 13, wherein the second semiconductor chip further comprises the controller monolithically integrated with the modulator, the first driver circuit, the second driver circuit and the lateral high-side power transistor. ### Claim 15 (depends on 10) The electronic system of claim 10, wherein the vertical low-side power transistor is a vertical power MOSFET, wherein gate and source terminals of the vertical power MOSFET face a second side of the electrically insulating body, and wherein a drain terminal of the vertical power MOSFET faces the first side of the electrically insulating body opposite the second side and forms part of the switch node. ### Claim 16 (depends on 15) The electronic system of claim 15, wherein the lateral high-side power transistor is a lateral power MOSFET, wherein gate and drain terminals of the lateral power MOSFET face the first side of the electrically insulating body, and wherein a source terminal of the lateral power MOSFET faces the first side of the electrically insulating body, forms part of the switch node and is electrically connected to the drain terminal of the vertical power MOSFET through respective electrically conductive paths embedded in the electrically insulating body between the first semiconductor chip and the first side of the electrically insulating body. ### Claim 17 (depends on 16) The electronic system of claim 16, wherein the source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partly overlap with one another. ### Claim 18 (depends on 10) The electronic system of claim 10, wherein the electrically insulating body of the embedding structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein the first semiconductor chip is arranged in the cavity. ### Claim 19 (depends on 10) The electronic system of claim 10, wherein the first semiconductor chip and the second semiconductor chip form a non-isolated point-of-load power converter configured to accept power input from an isolated dc-dc converter and provide dc power to the load. ### Claim 20 A power module, comprising: an embedding structure comprising an electrically insulating body; a first semiconductor chip embedded in the electrically insulating body and comprising a vertical low-side power transistor; and a second semiconductor chip comprising a lateral high-side power transistor, wherein all signal I/O and input power connections to the second semiconductor chip are provided by electrically conductive paths embedded in the electrically insulating body, wherein the vertical low-side power transistor and the lateral high-side power transistor are electrically connected within the embedding structure to form a switch node of a half bridge circuit, wherein a terminal at a side of the electrically insulating body provides a point of external electrical contact for the switch node. ### Claim 21 (depends on 20) The power module of claim 20, wherein the second semiconductor chip further comprises a driver circuit for the lateral high-side power transistor.