# US 11,121,696 B2 · Electrode defined resonator

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- Number: US 11,121,696 B2
- Document ID: US11121696B2
- Status: Granted
- Kind: B2
- Application number: 16/037,499
- Filed: 2018-07-17
- Published: 2020-01-23
- Granted: 2021-09-14
- Earliest claimed: 2018-07-17
- Assignees: II-Vi Delaware, Inc.
- Applicants: II-VI Delaware, Inc.
- Inventors: Di Lan; Wen-Qing Xu; Giovanni Barbarossa
- Web page: https://patentgrep.com/patent/US11121696B2

## CPC

- H03H 9/0547: {consisting of a vertical arrangement (H03H9/0566 takes precedence)}
- H03H 9/02102: {of temperature influence (cutting angles H03H9/02015)}
- H03H 9/02228: {Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer}
- H03H 9/13: for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145)
- H03H 9/172: {Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume}
- H03H 9/176: {consisting of ceramic material (H03H9/177, H03H9/178 take precedence)}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

## Claims

### Claim 1

A bulk acoustic resonator comprising:
a resonator body including:
a piezoelectric layer having a thickness;
a device layer; and
a top conductive layer on the piezoelectric layer opposite the device layer and having a plurality of first conductive lines or fingers that are spaced from each other by a pitch,
wherein substantially all of a first surface of the device layer opposite the piezoelectric layer is used for mounting the resonator body to adjacent a carrier that is separate from the resonator body; and
wherein the resonator body is configured to resonate in composite mode resonance, the composite mode resonance being a combination of thickness mode resonance defined by the thickness and lateral mode resonance defined by the pitch.

### Claim 2 (depends on 1)

The bulk acoustic resonator of claim 1, wherein all of the first surface of the device layer opposite the piezoelectric layer is used for mounting the entirety of the resonator body to the carrier.

### Claim 3 (depends on 1)

The bulk acoustic resonator of claim 1, further comprising a connecting structure configured to conduct electrical signals to the top conductive layer.

### Claim 4 (depends on 3)

The bulk acoustic resonator of claim 3, wherein the connecting structure is disposed next to the resonator body and is integral with or formed from the same materials as the layers of the resonator body.

### Claim 5 (depends on 4)

The bulk acoustic resonator of claim 4, wherein the connecting structure comprises a conductive via configured to conduct electrical signals to the bottom conductive layer.

### Claim 6 (depends on 1)

The bulk acoustic resonator of claim 1, wherein the device layer comprises diamond.

### Claim 7 (depends on 1)

The bulk acoustic resonator of claim 1, wherein the resonator body further comprises a bottom conductive layer between the piezoelectric layer and the device layer.

### Claim 8 (depends on 7)

The bulk acoustic resonator of claim 7, wherein the bottom conductive layer comprises a plurality of second conductive lines spaced from each other or comprises a conductive sheet.

### Claim 9 (depends on 1)

The bulk acoustic resonator of claim 1, wherein the lateral mode resonance is >20% of the composite mode resonance.

### Claim 10 (depends on 1)

The bulk acoustic resonator of claim 1, wherein the first surface of the device layer facing the carrier is used for mounting in its entirety directly to the carrier.

### Claim 11 (depends on 1)

The bulk acoustic resonator of claim 1, wherein the resonator body further comprises at least one temperature compensation layer positioned:
on the top conductive layer opposite the piezoelectric layer; or
between the piezoelectric layer and the device layer.

### Claim 12 (depends on 1)

The bulk acoustic resonator of claim 1, wherein:
the resonator body further comprises a substrate attached to the device layer opposite the piezoelectric layer;
the first surface of the device layer is mounted in its entirety to the substrate; and
a second surface of the substrate facing the carrier is used for mounting the resonator body to the carrier.

### Claim 13 (depends on 12)

The bulk acoustic resonator of claim 12, wherein the first surface of the device layer facing the carrier is mounted in its entirety directly to the substrate.

### Claim 14 (depends on 12)

The bulk acoustic resonator of claim 12, wherein the substrate comprises silicon.

### Claim 15 (depends on 12)

The bulk acoustic resonator of claim 12, wherein the resonator body further comprises at least one temperature compensation layer positioned:
on the top conductive layer opposite the piezoelectric layer;
between the piezoelectric layer and the device layer; or
between the device layer and the substrate.

### Claim 16 (depends on 12)

The bulk acoustic resonator of claim 12, wherein the resonator body further comprises:
another device layer between the substrate and the piezoelectric layer; or
another substrate between the substrate and the piezoelectric layer; or
both.

### Claim 17 (depends on 12)

The bulk acoustic resonator of claim 12, wherein:
the device layer has an acoustic impedance ≥60×106 Pa-s/m3; and
the substrate has an acoustic impedance ≤60×106 Pa-s/m3.