Back to results
US 11,114,997 B2Granted
Bulk-acoustic wave resonator
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsRan Hee Shin, Tae Kyung Lee, Sung Jun Lee, Hwa Sun Lee, Je Hong Kyoung, Sung Sun Kim, Jin Suk Son
Life of this patent
Estimating the term…
Abstract
A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.
Claims15
A bulk acoustic wave resonator comprising:
- a substrate;
- a seed layer disposed on the substrate;
- a first electrode disposed on the seed layer and comprising an aluminum alloy layer containing scandium (Sc);
- a piezoelectric layer disposed on the first electrode and comprising a layer having only a cation (Al) polarity, wherein the piezoelectric layer comprises a first piezoelectric layer disposed on the first electrode and having only the cation (Al) polarity, an oxide layer disposed directly on the first piezoelectric layer, and a second piezoelectric layer disposed directly on the oxide layer and having an anion (N) polarity, wherein a ratio of a thickness of the first piezoelectric layer to a thickness of the second piezoelectric layer ranges from 0.11 to 0.59;
- and
- a second electrode disposed on the second piezoelectric layer.
3 more elements
A bulk acoustic wave resonator comprising:
- a substrate;
- a first electrode disposed on the substrate;
- a piezoelectric layer disposed on the first electrode and comprising a first piezoelectric layer disposed on the first electrode and having only a cation (Al) polarity, an oxide layer disposed directly on the first piezoelectric layer, and a second piezoelectric layer disposed directly on the oxide layer and having an anion (N) polarity, wherein a ratio of a thickness of the first piezoelectric layer to a thickness of the second piezoelectric layer ranges from 1.63 to 5.25 or ranges from 0.11 to 0.59;
- and
- a second electrode disposed on the second piezoelectric layer.
2 more elements
A bulk acoustic wave resonator comprising:
- a substrate;
- a seed layer disposed on the substrate;
- a first electrode disposed on the seed layer and comprising an aluminum alloy layer containing scandium (Sc);
- a piezoelectric layer disposed on the first electrode and comprising a layer having only a cation (Al) polarity, wherein the piezoelectric layer comprises a first piezoelectric layer disposed on the first electrode and having only the cation (Al) polarity, an oxide layer disposed directly on the first piezoelectric layer, and a second piezoelectric layer disposed directly on the oxide layer and having an anion (N) polarity, wherein a ratio of a thickness of the first piezoelectric layer to a thickness of the second piezoelectric layer ranges from 1.63 to 5.25;
- and
- a second electrode disposed on the second piezoelectric layer.
3 more elements
Dependencies are inferred from the claim text.