Multilayer filter including a low inductance via assembly
AssigneeAVX Corporation
InventorsKwang Choi, Marianne Berolini
Life of this patent
Estimating the term…
Abstract
A multilayer filter may include a dielectric layer having a top surface, a bottom surface, and a thickness in a Z-direction between the top surface and the bottom surface. The multilayer filter may include a conductive layer formed on the top surface of the dielectric layer. The multilayer filter may include a via assembly formed in the dielectric layer and connected to the conductive layer on the top surface of the dielectric layer. The via assembly may extend to the bottom surface of the dielectric layer. The via assembly may have a length in the Z-direction and a total cross-sectional area in an X-Y plane that is perpendicular to the Z-direction. The via assembly may have an area-to-squared-length ratio that is greater than about 3.25.
Claims50
A multilayer filter comprising:
- a dielectric layer having a top surface, a bottom surface, and a thickness in a Z-direction between the top surface and the bottom surface;
- a conductive layer formed on the top surface of the dielectric layer;
- a via assembly formed in the dielectric layer and connected to the conductive layer on the top surface of the dielectric layer, the via assembly extending to the bottom surface of the dielectric layer, the via assembly having a length in the Z-direction and a total cross-sectional area in an X-Y plane that is perpendicular to the Z-direction, and wherein the via assembly has an area-to-squared-length ratio that is greater than about 3.25, wherein the via assembly comprises a plurality of vias that are spaced apart by a spacing distance that is less than about 200 microns.
A method of forming a multilayer filter, the method comprising:
- providing a dielectric layer having a top surface, a bottom surface, and a thickness in a Z-direction between the top surface and the bottom surface;
- depositing a conductive layer on the top surface of the dielectric layer;
- forming a via assembly in the dielectric layer, the via assembly being connected to the conductive layer on the top surface of the dielectric layer, the via assembly extending to the bottom surface of the dielectric layer, the via assembly having a length in the Z-direction and a total cross-sectional area in an X-Y plane that is perpendicular to the Z-direction, and wherein the via assembly has an area-to-squared-length ratio that is greater than about 3.25, wherein the via assembly comprises a plurality of vias that are spaced apart by a spacing distance that is less than about 200 microns.
A multilayer filter comprising:
- a dielectric layer having a top surface, a bottom surface, and a thickness in a Z-direction between the top surface and the bottom surface;
- a conductive layer formed on the top surface of the dielectric layer;
- a via assembly formed in the dielectric layer and connected to the conductive layer on the top surface of the dielectric layer, the via assembly extending to the bottom surface of the dielectric layer, the via assembly having a length in the Z-direction and a total cross-sectional area in an X-Y plane that is perpendicular to the Z-direction, and wherein the via assembly has an area-to-squared-length ratio that is greater than about 3.25, wherein the via assembly comprises a plurality of vias that are spaced apart by respective spacing distances and have respective widths in the X-Y plane, and wherein a width-to-spacing ratio is greater than about 1.
Dependencies are inferred from the claim text.