# US 11,114,993 B2 · High frequency multilayer filter

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- Number: US 11,114,993 B2
- Document ID: US11114993B2
- Status: Granted
- Kind: B2
- Application number: 16/718,250
- Filed: 2019-12-18
- Published: 2020-06-25
- Granted: 2021-09-07
- Earliest claimed: 2018-12-20
- Assignees: AVX Corporation
- Applicants: AVX Corporation
- Inventors: Kwang Choi; Marianne Berolini
- Web page: https://patentgrep.com/patent/US11114993B2

## CPC

- H03H 7/0115: {comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence)}
- H03H 1/00: Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network (constructional details of electromechanical transducers H03H9/00)
- H03H 3/00: Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H 7/1725: {Element to ground being common to different shunt paths, i.e. Y-structure}
- H03H 7/1766: {Parallel LC in series path (H03H7/1783 takes precedence)}
- H03H 7/1775: {Parallel LC in shunt or branch path (H03H7/1791 takes precedence)}
- H03H 2001/0085: {Multilayer, e.g. LTCC, HTCC, green sheets}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

A high frequency multilayer filter may include a plurality of dielectric layers and a signal path having an input and an output. The multilayer filter may include an inductor including a conductive layer formed over a first dielectric layer. The inductor may be electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground. The multilayer filter may include a capacitor including a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer. The multilayer filter has a characteristic frequency that is greater than about 6 GHz.

## Claims

### Claim 1

A high frequency multilayer filter comprising:
a plurality of dielectric layers;
a signal path having an input and an output; and
an inductor comprising a conductive layer formed over a first dielectric layer, and wherein the inductor is electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground, wherein the conductive layer of the inductor has an effective length between the first location and the second location that is less than about 2 mm; and
a capacitor comprising a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer;
wherein the multilayer filter has a characteristic frequency that is greater than about 8 GHz.

### Claim 2 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the characteristic frequency comprises at least one of a low pass frequency, a high pass frequency, or an upper bound of a bandpass frequency.

### Claim 3 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the conductive layer of the inductor is parallel with an X-Y plane and spaced apart from each of the first electrode and second electrode of the capacitor in a Z-direction that is perpendicular with the X-Y plane by at least 10 microns.

### Claim 4 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the inductor comprises a first elongated section elongated in a first direction and having a first width and a second elongated section elongated in a second direction and having a second width, and wherein the first direction is greater than about 15 degrees from the second direction.

### Claim 5 (depends on 4)

The high frequency multilayer filter as in claim 4, wherein the first width of the first elongated section is approximately equal to the second width of the second elongated section.

### Claim 6 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the inductor comprises at least two corners.

### Claim 7 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the inductor defines less than one half of a loop.

### Claim 8 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the inductor defines at least one half of a loop.

### Claim 9 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising an additional capacitor having a capacitive area that is less than about 0.05 mm2.

### Claim 10 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the conductive layer of the inductor has a width that is less than 1 mm.

### Claim 11 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the dielectric layer on which the conductive layer of the inductor is formed has a thickness that is less than about 100 microns.

### Claim 12 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising a via formed in the dielectric layer on which the conductive layer of the inductor is formed, the via being electrically connected to the inductor and the ground.

### Claim 13 (depends on 12)

The high frequency multilayer filter as in claim 12, further comprising:
an additional conductive layer formed over another of the plurality of dielectric layers; and
an additional via formed in the dielectric layer on which the conductive layer of the inductor is formed, the additional via being electrically connected to the inductor and the additional conductive layer.

### Claim 14 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising a dielectric material having a dielectric constant that is less than about 100 as determined in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 15 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising a dielectric material having a dielectric constant that is greater than about 100 as determined in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 16 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising an organic dielectric material.

### Claim 17 (depends on 16)

The high frequency multilayer filter as in claim 16, wherein the organic dielectric material comprises liquid crystalline polymer.

### Claim 18 (depends on 16)

The high frequency multilayer filter as in claim 16, wherein the organic dielectric material comprises polyphenyl ether.

### Claim 19 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising a dielectric material that comprises a ceramic-filled epoxy.

### Claim 20 (depends on 1)

The high frequency multilayer filter as in claim 1, wherein the multilayer filter comprises a dielectric material disposed between the first electrode and the second electrode, the dielectric material having a dielectric constant that ranges from about 5 to about 8 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 21 (depends on 20)

The high frequency multilayer filter as in claim 20, further comprising an additional dielectric material having a dielectric constant that ranges from about 1 to about 4 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 22 (depends on 1)

The high frequency multilayer filter as in claim 1, further comprising a self-aligning capacitor.

### Claim 23 (depends on 22)

The high frequency multilayer filter as in claim 22, wherein the signal path comprises a conductive layer that is elongated in a first direction and has a width in a second direction that is perpendicular to the first direction, and wherein the self-aligning capacitor comprises a conductive layer that is offset in a Z-direction from the conductive layer of the signal path, the Z-direction being perpendicular to each of the first direction and second direction, the conductive layer of the self-aligning capacitor being elongated in the second direction and having a width in the first direction.

### Claim 24 (depends on 22)

The high frequency multilayer filter as in claim 22, wherein the ground comprises a ground plane, and wherein the self-aligning capacitor is electrically connected to the ground plane and capacitively coupled with the signal path.

### Claim 25

A method of forming a high frequency multilayer filter, the method comprising:
forming an inductor comprising a conductive layer on a first dielectric layer;
forming a capacitor comprising a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer;
forming a first via at a first location electrically connecting the inductor with a signal path;
forming a second via at a second location electrically connecting the inductor with at least one of the signal path or a ground plane; and
forming a self-aligning capacitor, wherein the signal path comprises a conductive layer that is elongated in a first direction and has a width in a second direction that is perpendicular to the first direction, and wherein the self-aligning capacitor comprises a conductive layer that is offset in a Z-direction from the conductive layer of the signal path, the Z-direction being perpendicular to each of the first direction and second direction, the conductive layer of the self-aligning capacitor being elongated in the second direction and having a width in the first direction;
wherein the multilayer filter has a characteristic frequency that is greater than about 8 GHz.

### Claim 26

A high frequency multilayer filter comprising:
a plurality of dielectric layers;
a signal path having an input and an output; and
an inductor comprising a conductive layer formed over a first dielectric layer, and wherein the inductor is electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground, and wherein the conductive layer of the inductor has a width that is less than 1 mm; and
a capacitor comprising a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer;
wherein the multilayer filter has a characteristic frequency that is greater than about 8 GHz.

### Claim 27 (depends on 26)

The high frequency multilayer filter as in claim 26, further comprising an organic dielectric material, wherein the organic dielectric material comprises at least one of liquid crystalline polymer, polyphenyl ether, or a ceramic-filled epoxy.

### Claim 28 (depends on 26)

The high frequency multilayer filter as in claim 26, wherein the characteristic frequency comprises at least one of a low pass frequency, a high pass frequency, or an upper bound of a bandpass frequency.

### Claim 29 (depends on 26)

The high frequency multilayer filter as in claim 26, wherein the dielectric layer on which the conductive layer of the inductor is formed has a thickness that is less than about 100 microns.

### Claim 30 (depends on 26)

The high frequency multilayer filter as in claim 26, further comprising a via formed in the dielectric layer on which the conductive layer of the inductor is formed, the via being electrically connected to the inductor and the ground.

### Claim 31 (depends on 30)

The high frequency multilayer filter as in claim 30, further comprising:
an additional conductive layer formed over another of the plurality of dielectric layers; and
an additional via formed in the dielectric layer on which the conductive layer of the inductor is formed, the additional via being electrically connected to the inductor and the additional conductive layer.

### Claim 32 (depends on 26)

The high frequency multilayer filter as in claim 26, wherein the multilayer filter comprises a dielectric material disposed between the first electrode and the second electrode, the dielectric material having a dielectric constant that ranges from about 5 to about 8 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 33 (depends on 32)

The high frequency multilayer filter as in claim 32, further comprising an additional dielectric material having a dielectric constant that ranges from about 1 to about 4 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 34

A high frequency multilayer filter comprising:
a plurality of dielectric layers;
a signal path having an input and an output; and
an inductor comprising a conductive layer formed over a first dielectric layer, and wherein the inductor is electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground;
a capacitor comprising a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer; and
a self-aligning capacitor, wherein the signal path comprises a conductive layer that is elongated in a first direction and has a width in a second direction that is perpendicular to the first direction, and wherein the self-aligning capacitor comprises a conductive layer that is offset in a Z-direction from the conductive layer of the signal path, the Z-direction being perpendicular to each of the first direction and second direction, the conductive layer of the self-aligning capacitor being elongated in the second direction and having a width in the first direction.

### Claim 35 (depends on 34)

The high frequency multilayer filter as in claim 34, wherein the multilayer filter comprises a dielectric material disposed between the first electrode and the second electrode, the dielectric material having a dielectric constant that ranges from about 5 to about 8 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 36 (depends on 34)

The high frequency multilayer filter as in claim 34, wherein the characteristic frequency comprises at least one of a low pass frequency, a high pass frequency, or an upper bound of a bandpass frequency.

### Claim 37 (depends on 34)

The high frequency multilayer filter as in claim 34, wherein the dielectric layer on which the conductive layer of the inductor is formed has a thickness that is less than about 100 microns.

### Claim 38 (depends on 34)

The high frequency multilayer filter as in claim 34, further comprising a via formed in the dielectric layer on which the conductive layer of the inductor is formed, the via being electrically connected to the inductor and the ground.

### Claim 39 (depends on 38)

The high frequency multilayer filter as in claim 38, further comprising:
an additional conductive layer formed over another of the plurality of dielectric layers; and
an additional via formed in the dielectric layer on which the conductive layer of the inductor is formed, the additional via being electrically connected to the inductor and the additional conductive layer.

### Claim 40 (depends on 34)

The high frequency multilayer filter as in claim 34, further comprising an organic dielectric material, wherein the organic dielectric material comprises at least one of liquid crystalline polymer, polyphenyl ether, or a ceramic-filled epoxy.

### Claim 41 (depends on 35)

The high frequency multilayer filter as in claim 35, further comprising a dielectric material having a dielectric constant that is greater than about 100 as determined in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 42 (depends on 41)

The high frequency multilayer filter as in claim 41, further comprising a capacitor having a capacitive area that is less than about 0.05 mm2.

### Claim 43

A high frequency multilayer filter comprising:
a plurality of dielectric layers;
a signal path having an input and an output; and
an inductor comprising a conductive layer formed over a first dielectric layer, and wherein the inductor is electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground;
a capacitor comprising a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer; and
an additional capacitor having a capacitive area that is less than about 0.05 mm2;
wherein the multilayer filter has a characteristic frequency that is greater than about 8 GHz.

### Claim 44 (depends on 43)

The high frequency multilayer filter as in claim 43, further comprising an organic dielectric material, wherein the organic dielectric material comprises at least one of liquid crystalline polymer, polyphenyl ether, or a ceramic-filled epoxy.

### Claim 45 (depends on 43)

The high frequency multilayer filter as in claim 43, wherein the characteristic frequency comprises at least one of a low pass frequency, a high pass frequency, or an upper bound of a bandpass frequency.

### Claim 46 (depends on 43)

The high frequency multilayer filter as in claim 43, wherein the dielectric layer on which the conductive layer of the inductor is formed has a thickness that is less than about 100 microns.

### Claim 47 (depends on 46)

The high frequency multilayer filter as in claim 46, further comprising a via formed in the dielectric layer on which the conductive layer of the inductor is formed, the via being electrically connected to the inductor and the ground.

### Claim 48 (depends on 47)

The high frequency multilayer filter as in claim 47, further comprising:
an additional conductive layer formed over another of the plurality of dielectric layers; and
an additional via formed in the dielectric layer on which the conductive layer of the inductor is formed, the additional via being electrically connected to the inductor and the additional conductive layer.

### Claim 49 (depends on 43)

The high frequency multilayer filter as in claim 43, wherein the multilayer filter comprises a dielectric material disposed between the first electrode and the second electrode, the dielectric material having a dielectric constant that ranges from about 5 to about 8 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.

### Claim 50 (depends on 49)

The high frequency multilayer filter as in claim 49, further comprising an additional dielectric material having a dielectric constant that ranges from about 1 to about 4 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25° C. and frequency of 1 MHz.
