# US 11,114,950 B2 · High frequency power supply device

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- Number: US 11,114,950 B2
- Document ID: US11114950B2
- Status: Granted
- Kind: B2
- Application number: 16/712,399
- Filed: 2019-12-12
- Published: 2020-04-16
- Granted: 2021-09-07
- Earliest claimed: 2017-06-22
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Tatsuya Hosotani
- Web page: https://patentgrep.com/patent/US11114950B2

## CPC

- H02J 50/12: of the resonant type
- H02J 7/855: {with circuits adapted for supplying loads from the battery}
- H02M 1/12: Arrangements for reducing harmonics from AC input or output
- H02M 1/44: Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
- H02M 3/01: {Resonant DC/DC converters}
- H02M 3/33571: {Half-bridge at primary side of an isolation transformer}
- H02M 7/5387: in a bridge configuration
- H02M 1/0058: {by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero (using an auxiliary actively switched resonant commutation circuit connected to an intermediate DC voltage or between two push-pull branches of an inverter bridge H02M7/4811; in resonant inverters H02M7/4815; in inverters operating from a resonant DC source H02M7/4826)}
- H02M 1/007: {Plural converter units in cascade (push-pull DC/DC converters with pre-regulator H02M3/3374; DC-AC converters following a DC-DC stage including a high frequency transformer H02M7/4807; DC-AC converters following a DC-DC conversion stage generating periodically varying voltages H02M7/4826)}
- H02M 1/126: {using passive filters}
- H02M 1/14: Arrangements for reducing ripples from DC input or output
- H02M 3/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections}
- Y02B 70/10: Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
- H02J: ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- Y02B: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

## Abstract

A line length between an input end of a switching circuit and a high frequency capacitor is shorter than a line length between an output end of a DC power supply and the high frequency capacitor. A current path going through the switching circuit and the high frequency capacitor is the shortest among a plurality of current paths through which a switching current is caused to flow by switching at the switching circuit. Furthermore, the high frequency capacitor makes the ratio of time during which the voltage across the high-side switch element changes by a switching operation of the high-side switch element and the ratio of time during which the voltage across the low-side switch element changes by a switching operation of the low-side switch element the same, and thus reduces a harmonic wave current included in a current output from the high frequency power generation circuit.

## Claims

### Claim 1

A high frequency power supply device configured using a circuit substrate, comprising:
an input unit for a DC power supply;
a high frequency power generation circuit that is connected to the DC power supply and includes a switching circuit including a high-side switch element and a low-side switch element; and
a high frequency capacitor that is connected in parallel between the DC power supply and the high frequency power generation circuit,
wherein
a line length between an input end of the switching circuit and the high frequency capacitor is shorter than a line length between an output end of the DC power supply and the high frequency capacitor,
a current path going through the switching circuit and the high frequency capacitor is the shortest among a plurality of current paths through which a switching current is caused to flow by switching at the switching circuit, and
the high frequency capacitor is directly connected, with a shortest distance, to a connecting part of one end of the high-side switch element at the circuit substrate and a connecting part of one end of the low-side switch element at the circuit substrate.

### Claim 2

A high frequency power supply device that is configured using a circuit substrate, comprising:
an input unit for a DC power supply;
a high frequency power generation circuit that is connected to the DC power supply and includes a switching circuit including a high-side switch element and a low-side switch element; and
a high frequency capacitor that is connected in parallel between the DC power supply and the high frequency power generation circuit,
wherein
a line length between an input end of the switching circuit and the high frequency capacitor is shorter than a line length between an output end of the DC power supply and the high frequency capacitor,
a current path going through the switching circuit and the high frequency capacitor is the shortest among a plurality of current paths through which a switching current is caused to flow by switching at the switching circuit,
the high-side switch element and the low-side switch element are arranged at one main surface of the circuit substrate, and the high frequency capacitor is arranged at the other main surface of the circuit substrate, and
the high frequency capacitor is directly connected, with a shortest distance, to the high-side switch element and the low-side switch element through a plurality of vias formed at the circuit substrate.

### Claim 3 (depends on 2)

The high frequency power supply device according to claim 2, wherein the high frequency power generation circuit is arranged at the circuit substrate such that the switching circuit and the high frequency capacitor overlap at least partially when the circuit substrate is viewed in plan.

### Claim 4 (depends on 1)

The high frequency power supply device according to claim 1, wherein the high frequency capacitor makes a ratio of time during which a voltage across the high-side switch element changes by a switching operation of the high-side switch element and a ratio of time during which a voltage across the low-side switch element changes by a switching operation of the low-side switch element the same.

### Claim 5 (depends on 1)

The high frequency power supply device according to claim 1, wherein the high frequency capacitor is a multilayer ceramic capacitor made of a temperature compensation material with no Curie point.

### Claim 6 (depends on 1)

The high frequency power supply device according to claim 1, wherein the high frequency capacitor is a multilayer ceramic capacitor including a dielectric made of a low-strain material having a Curie point lower than a normal temperature and exhibiting a paraelectric phase at the normal temperature.

### Claim 7 (depends on 1)

The high frequency power supply device according to claim 1, further comprising:
a low frequency capacitor that is connected in parallel between the DC power supply and the high frequency power generation circuit and has a large capacitance for low frequencies compared to the high frequency capacitor,
wherein the line length between the input end of the switching circuit and the high frequency capacitor is shorter than a line length between the input end of the switching circuit and the low frequency capacitor.

### Claim 8 (depends on 7)

The high frequency power supply device according to claim 7, wherein the high frequency capacitor has an equivalent series inductance smaller than that of the low frequency capacitor.

### Claim 9 (depends on 7)

The high frequency power supply device according to claim 7, wherein the low frequency capacitor is a multilayer ceramic capacitor made of a high dielectric constant material having a Curie point higher than a normal temperature and exhibiting a ferroelectric phase at the normal temperature.

### Claim 10 (depends on 1)

The high frequency power supply device according to claim 1, further comprising:
a battery that is connected in parallel between the DC power supply and the high frequency capacitor,
wherein the line length between the input end of the switching circuit and the high frequency capacitor is shorter than a line length between the input end of the switching circuit and the battery.

### Claim 11 (depends on 10)

The high frequency power supply device according to claim 10, wherein the battery is an all-solid-state battery.

### Claim 12 (depends on 2)

The high frequency power supply device according to claim 2, wherein the high frequency capacitor makes a ratio of time during which a voltage across the high-side switch element changes by a switching operation of the high-side switch element and a ratio of time during which a voltage across the low-side switch element changes by a switching operation of the low-side switch element the same.

### Claim 13 (depends on 3)

The high frequency power supply device according to claim 3, wherein the high frequency capacitor makes a ratio of time during which a voltage across the high-side switch element changes by a switching operation of the high-side switch element and a ratio of time during which a voltage across the low-side switch element changes by a switching operation of the low-side switch element the same.

### Claim 14 (depends on 2)

The high frequency power supply device according to claim 2, wherein the high frequency capacitor is a multilayer ceramic capacitor made of a temperature compensation material with no Curie point.

### Claim 15 (depends on 2)

The high frequency power supply device according to claim 2, wherein the high frequency capacitor is a multilayer ceramic capacitor including a dielectric made of a low-strain material having a Curie point lower than a normal temperature and exhibiting a paraelectric phase at the normal temperature.

### Claim 16 (depends on 2)

The high frequency power supply device according to claim 2, further comprising:
a low frequency capacitor that is connected in parallel between the DC power supply and the high frequency power generation circuit and has a large capacitance for low frequencies compared to the high frequency capacitor,
wherein the line length between the input end of the switching circuit and the high frequency capacitor is shorter than a line length between the input end of the switching circuit and the low frequency capacitor.

### Claim 17 (depends on 16)

The high frequency power supply device according to claim 16, wherein the high frequency capacitor has an equivalent series inductance smaller than that of the low frequency capacitor.

### Claim 18 (depends on 16)

The high frequency power supply device according to claim 16, wherein the low frequency capacitor is a multilayer ceramic capacitor made of a high dielectric constant material having a Curie point higher than a normal temperature and exhibiting a ferroelectric phase at the normal temperature.

### Claim 19 (depends on 2)

The high frequency power supply device according to claim 2, further comprising:
a battery that is connected in parallel between the DC power supply and the high frequency capacitor,
wherein the line length between the input end of the switching circuit and the high frequency capacitor is shorter than a line length between the input end of the switching circuit and the battery.

### Claim 20 (depends on 19)

The high frequency power supply device according to claim 19, wherein the battery is an all-solid-state battery.
