# US 11,114,836 B2 · Semiconductor device, intelligent power module and power conversion apparatus

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- Number: US 11,114,836 B2
- Document ID: US11114836B2
- Status: Granted
- Kind: B2
- Application number: 15/094,469
- Filed: 2016-04-08
- Published: 2017-03-02
- Granted: 2021-09-07
- Earliest claimed: 2015-08-28
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Rei Yoneyama; Fumitaka Tametani; Manabu Matsumoto; Haruhiko Takemoto; Hiroshi Yoshida; Motonobu Joko
- Web page: https://patentgrep.com/patent/US11114836B2

## CPC

- H02H 3/08: responsive to excess current (responsive to abnormal temperature caused by excess current H02H5/04)
- H02H 3/085: {making use of a thermal sensor, e.g. thermistor, heated by the excess current (also responsive to the temperature of the protected device H02H5/041, thermal images H02H6/00)}
- H02H 3/20: responsive to excess voltage
- H02H 5/04: responsive to abnormal temperature {(specially adapted for electric machines H02H7/0852)}
- H02H 5/041: {additionally responsive to excess current (H02H5/048 takes precedence)}
- H02H 7/10: for converters; for rectifiers {(forming part of the control circuit of the converter, see the relevant group in H02M)}
- H02H 7/222: {for switches}
- H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections}
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 12/411: {Insulated-gate bipolar transistors [IGBT]}
- H10D 62/8303: {Diamond}
- H10D 62/8325: {Silicon carbide}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10W 70/658: {for devices provided for in groups H10D8/00 - H10D48/00}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 76/136: having other interconnections perpendicular to the conductive base
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M 1/32: Means for protecting converters other than automatic disconnection
- H02M 1/327: {against abnormal temperatures}
- H02M 7/5387: in a bridge configuration
- H10W 72/07552: {changes in structures or sizes}
- H10W 72/527: {Multiple bond wires having different sizes}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H)
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a semiconductor device and it is an object of the present invention to provide a semiconductor device that makes it easy to change a specification on driving of a power semiconductor element or control of a protection operation thereof. The semiconductor device includes a power semiconductor element, a main electrode terminal of the power semiconductor element, a sensor section that emits a signal corresponding to a physical state of the power semiconductor element, a sensor signal terminal connected to the sensor section, a drive terminal that supplies power to drive the power semiconductor element and a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal, and the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.

## Claims

### Claim 1

A semiconductor device comprising:
a power semiconductor element;
a main electrode terminal of the power semiconductor element;
a sensor section that emits a signal corresponding to a physical state of the power semiconductor element;
a sensor signal terminal connected to the sensor section;
a drive terminal that supplies power to drive the power semiconductor element; and
a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal,
wherein the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the physical state is a temperature.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the physical state is a current.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the physical state is a voltage.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal and the drive terminal are disposed inside the case and top ends of the sensor signal terminal and the drive terminal are lower than a top surface portion of the case.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein top ends of the sensor signal terminal and the drive terminal are higher than a top surface portion of the case.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal and the drive terminal comprise a terminal whose top end is lower than a top surface portion of the case and a terminal whose top end is higher than the top surface portion of the case.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal comprises a terminal that outputs a signal extracted from a wiring pattern on which the power semiconductor element is mounted.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal and the drive terminal are disposed on a wiring pattern.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein the power semiconductor element is formed of a wide bandgap semiconductor.

### Claim 11 (depends on 10)

The semiconductor device according to claim 10, wherein the wide bandgap semiconductor is silicon carbide, nitride gallium-based material or diamond.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal and the drive terminal comprise a press-fit terminal.

### Claim 13 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal and the drive terminal are female type terminals.

### Claim 14 (depends on 1)

The semiconductor device according to claim 1, wherein the inside of the case is filled with sealing resin.

### Claim 15 (depends on 1)

An intelligent power module comprising:
the semiconductor device according to claim 1; and
a control substrate connected to the sensor signal terminal and the drive terminal,
wherein the control substrate comprises:
an external input/output control signal terminal; and
an integrated circuit, and
the integrated circuit is connected to the external input/output control signal terminal, the sensor signal terminal and the drive terminal, and controls driving of the power semiconductor element and controls a protection operation of the power semiconductor element corresponding to a signal outputted from the sensor signal terminal.

### Claim 16 (depends on 1)

A power conversion apparatus comprising the semiconductor device according to claim 1.

### Claim 17 (depends on 1)

The semiconductor device according to claim 1, wherein the sensor signal terminal is configured to transmit the signal corresponding to the physical state of the power semiconductor element, and the drive terminal is configured to receive the power to drive the power semiconductor element from outside the case.

### Claim 18 (depends on 1)

The semiconductor device according to claim 1, wherein a top surface portion of the case is open.