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AssigneeKabushiki Kaisha Toshiba
InventorsKei Kaneko, Shinji Saito, Rei Hashimoto, Tsutomu Kakuno, Yuichiro Yamamoto, Tomohiro Takase
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A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.
A semiconductor laser wafer, comprising:
A semiconductor laser, comprising:
Dependencies are inferred from the claim text.