# US 11,114,634 B2 · Photodiode

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- Number: US 11,114,634 B2
- Document ID: US11114634B2
- Status: Granted
- Kind: B2
- Application number: 16/031,412
- Filed: 2018-07-10
- Published: 2018-11-08
- Granted: 2021-09-07
- Earliest claimed: 2011-09-09
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Kyung Bae Park; Kyu Sik Kim; Yong Wan Jin; Kwang Hee Lee; Dong-Seok Leem; Seon-Jeong Lim
- Web page: https://patentgrep.com/patent/US11114634B2

## CPC

- H10K 30/30: comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K 30/40: comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
- H10K 30/50: Photovoltaic [PV] devices
- Y02E 10/549: Organic PV cells
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

## Claims

### Claim 1

A photodiode comprising:
an anode;
a cathode; and
an intrinsic layer between the anode and the cathode, the intrinsic layer including lower, intermediate, and upper sublayers deposited in sequence, wherein a composition ratio of a P-type semiconductor relative to a N-type semiconductor is substantially constant throughout each of the lower, intermediate, and upper sublayers,
wherein each sublayer of the lower, intermediate, and upper sublayers includes both of the P-type semiconductor and the N-type semiconductor,
wherein the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the lower sublayer is an inverse of the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the upper sublayer,
wherein the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the intermediate sublayer is about 5:1, and
wherein the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the lower sublayer is greater than 10:1 and smaller than about 1000:1, and the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the upper sublayer is smaller than 1:10 and greater than about 1:1000.

### Claim 2 (depends on 1)

The photodiode of claim 1, wherein each of lower, intermediate, and upper sublayers has a thickness of about 1 nm to about 100 nm.

### Claim 3 (depends on 1)

The photodiode of claim 1, further comprising:
an N-type semiconductor layer between the intrinsic layer and the cathode, the N-type semiconductor layer substantially not including the P-type semiconductor.

### Claim 4 (depends on 3)

The photodiode of claim 3, further comprising:
an electron blocking layer between the intrinsic layer and the anode, the electron blocking layer including at least one of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), 4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine (2TNATA), a molybdenum oxide, and a zinc oxide.

### Claim 5 (depends on 1)

The photodiode of claim 1, further comprising:
a P-type semiconductor layer between the intrinsic layer and the anode, the P-type semiconductor layer not including the N-type semiconductor.

### Claim 6 (depends on 1)

The photodiode of claim 1, further comprising:
a hole blocking layer between the intrinsic layer and the cathode, the hole blocking layer including at least one of 4,7-diphenyl-1,10-phenanthroline (Bphen), Benocyclidine (BCP), and 1,3,5-tris(1-phenyl-1H-benziInidazol-2-yl)benzene (TPBI).