# US 11,114,630 B2 · Display panel, manufacturing method thereof, display device

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- Number: US 11,114,630 B2
- Document ID: US11114630B2
- Status: Granted
- Kind: B2
- Application number: 16/597,905
- Filed: 2019-10-10
- Published: 2020-07-23
- Granted: 2021-09-07
- Earliest claimed: 2019-01-22
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: BOE Technology Group Co., Ltd.
- Inventors: Shipei Li; Qi Yao; Wusheng Li; Jiangnan Lu; Huili Wu; Fang He; Renquan Gu; Dongsheng Yin; Sheng Xu; Wei He
- Web page: https://patentgrep.com/patent/US11114630B2

## CPC

- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/873: {Encapsulations}
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 71/80: using temporary substrates
- H10K 77/111: {Flexible substrates}
- H10K 59/1201: {Manufacture or treatment}
- H10K 2102/311: {Flexible OLED}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A display panel is provided, including a substrate on a base, a transistor stack on the substrate, and a fluorescent layer between the base and the transistor stack. The fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process, and an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base. A display device comprising the display panel, and a manufacturing method of the display panel are further provided.

## Claims

### Claim 1

A display panel comprising:
a substrate on a base;
a transistor stack on the substrate; and
a fluorescent layer between the base and the transistor stack,
wherein the fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process,
wherein an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base, and
wherein the fluorescent layer comprises a photoresist mixed with at least one of an organic fluorescent material or an inorganic fluorescent material.

### Claim 2 (depends on 1)

The display panel according to claim 1, wherein the base comprises a rigid base and the substrate comprises a flexible substrate.

### Claim 3 (depends on 1)

The display panel according to claim 1, wherein the orthographic projection of the fluorescent layer on the base completely overlaps the orthographic projection of the active layer on the base.

### Claim 4 (depends on 1)

The display panel according to claim 1, wherein the orthographic projection of the fluorescent layer on the base completely overlaps an orthographic projection of the substrate on the base.

### Claim 5 (depends on 1)

The display panel according to claim 1,
wherein the organic fluorescent material comprises at least one of fluorescein, rhodamine, a cyanine dye or a pyrene dye, and
wherein the inorganic fluorescent material comprises at least one of an alkali metal sulfide or an aluminate.

### Claim 6 (depends on 1)

The display panel according to claim 1, wherein the transistor stack comprises the active layer, a gate insulating layer on the active layer, a gate on the gate insulating layer, an interlayer insulating layer on the gate, and a source and a drain on the interlayer insulating layer and in contact with the active layer through a via hole in the interlayer insulating layer.

### Claim 7 (depends on 1)

The display panel according to claim 1, further comprising:
a passivation layer on the transistor stack,
a planarization layer on the passivation layer,
an electrode layer on the planarization layer and in contact with the transistor stack through a via hole in the passivation layer and the planarization layer,
a pixel defining layer on the electrode layer,
a light emitting layer on the pixel defining layer, and
a thin film encapsulation layer on the light emitting layer.

### Claim 8 (depends on 7)

The display panel according to claim 7, further comprising a support layer between the pixel defining layer and the light emitting layer.

### Claim 9 (depends on 1)

The display panel according to claim 1, further comprising a buffer layer between the fluorescent layer and the active layer.

### Claim 10 (depends on 1)

A display device comprising the display panel according to claim 1.

### Claim 11 (depends on 10)

The display device according to claim 10, wherein the base is removed from the substrate.

### Claim 12

A manufacturing method of a display panel, comprising:
providing a substrate on a base;
mixing at least one of an organic fluorescent material or an inorganic fluorescent material in a photoresist to form a fluorescent material, and coating the fluorescent material on the substrate to form a fluorescent layer, the fluorescent layer being configured to prevent light from damaging an active layer in a transistor stack in a laser lift-off process;
providing the transistor stack on the fluorescent layer, wherein an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base; and
lifting off the base from the substrate by the laser lift-off process.

### Claim 13 (depends on 12)

The manufacturing method according to claim 12, wherein said coating the fluorescent material on the substrate to form the fluorescent layer comprises:
patterning the fluorescent material to form the fluorescent layer such that the orthographic projection of the fluorescent layer on the base completely overlaps the orthographic projection of the active layer on the base.

### Claim 14 (depends on 12)

The manufacturing method according to claim 12, further comprising:
providing a buffer layer on the fluorescent layer prior to providing the transistor stack.

### Claim 15 (depends on 12)

The manufacturing method according to claim 12, wherein said providing the transistor stack on the fluorescent layer comprises:
forming the active layer, a gate insulating layer, a gate, an interlayer insulating layer, and a source and a drain on the fluorescent layer successively,
wherein the source and the drain are in contact with the active layer through a via hole in the interlayer insulating layer.

### Claim 16 (depends on 12)

The manufacturing method according to claim 12, further comprising:
forming a passivation layer, a planarization layer, an electrode layer, a pixel defining layer, a light emitting layer, and an encapsulation layer on the transistor stack successively,
wherein the electrode layer is in contact with a source and a drain through a via hole in the passivation layer and the planarization layer.

### Claim 17 (depends on 16)

The manufacturing method according to claim 16, further comprising:
forming a support layer between the pixel defining layer and the light emitting layer.

### Claim 18 (depends on 12)

The manufacturing method according to claim 12, wherein the base comprises a rigid material, and the substrate comprises a flexible material.