# US 11,114,616 B2 · Ti-based amorphous alloy and phase change memory device applying the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,616 B2 - Document ID: US11114616B2 - Status: Granted - Kind: B2 - Application number: 16/550,476 - Filed: 2019-08-26 - Published: 2020-08-27 - Granted: 2021-09-07 - Earliest claimed: 2019-02-27 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Eunsung Lee; Duseop Yoon; Joungeun Yoo - Web page: https://patentgrep.com/patent/US11114616B2 ## CPC - C22C 14/00: Alloys based on titanium - H10N 70/883: {Oxides or nitrides} - C22F 1/183: {of titanium or alloys based thereon} - H10B 63/10: Phase change RAM [PCRAM, PRAM] devices - H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/841: {Electrodes} - H10N 70/8413: {adapted for resistive heating} - H10N 70/881: {Switching materials} - H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)} - C22C: ALLOYS (treatment of alloys C21D, C22F) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - C22F: CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS (surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by this subclass, C23F17/00) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase. ## Claims ### Claim 1 A titanium-based amorphous alloy comprising: titanium; antimony; at least one metallic component, wherein the at least one metallic component includes Ni; and at least one additional metallic component or at least one metalloid component, wherein the titanium-based amorphous alloy is Te-free, and the titanium-based amorphous alloy being configured as a phase-change material capable of having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase. ### Claim 2 (depends on 1) The titanium-based amorphous alloy of claim 1, further comprising: Cu, Zr, Sn, Be, Pd, Si, or a combination thereof. ### Claim 3 (depends on 1) The titanium-based amorphous alloy of claim 1, further comprising: a dopant, wherein the dopant includes at least one of a metalloid, a non-metal, or a rare-earth element. ### Claim 4 (depends on 3) The titanium-based amorphous alloy of claim 3, wherein the dopant is selected from B, Si, Ge, As, C, N, P, S, Se, Ce, Dy, Er, Eu, Gd, Ho, La, Lu, Nd, Pr, Pm, Sm, Sc, Tb, Tm, Yb, and Y. ### Claim 5 (depends on 1) The titanium-based amorphous alloy of claim 1, wherein a Ti content of the titanium-based amorphous alloy is 20% or higher. ### Claim 6 (depends on 1) A phase-change memory device comprising: a first electrode; a second electrode spaced apart from the first electrode; and a phase-change layer between the first electrode and the second electrode, wherein the phase-change layer includes the titanium-based amorphous alloy of claim 1. ### Claim 7 (depends on 6) The phase-change memory device of claim 6, further comprising: Cu, Zr, Sn, Be, Pd, Si, or a combination thereof. ### Claim 8 (depends on 6) The phase-change memory device of claim 6, further comprising: a dopant, wherein the dopant includes at least one of a metalloid, a non-metal, or a rare-earth element. ### Claim 9 (depends on 8) The phase-change memory device of claim 8, wherein the dopant comprises: at least one metalloid selected from B, Si, Ge, and As; at least one non-metal selected from C, N, P, S, and Se; or at least one rare-earth element selected from Ce, Dy, Er, Eu, Gd, Ho, La, Lu, Nd, Pr, Pm, Sm, Sc, Tb, Tm, Yb, and Y. ### Claim 10 (depends on 6) The phase-change memory device of claim 6, wherein a Ti content of the titanium-based amorphous alloy included in the phase-change layer is 20% or higher. ### Claim 11 (depends on 6) The phase-change memory device of claim 6, wherein the first electrode includes a plug-type electrode, and the plug-type electrode has a smaller width than the phase-change layer. ### Claim 12 A titanium-based amorphous alloy comprising: titanium (Ti); antimony (Sb); nickel (Ni); and optionally at least one other element (D′), the titanium-based amorphous alloy being represented by Chemical Formula 1, TiaSbbNicD′d, [Chemical Formula 1] wherein, in Chemical Formula 1, a+b+c+d=1, a is greater than 0.2, b is greater than 0 and less than 0.3, c is greater than 0.05 and less 0.40, d is greater than or equal to 0, wherein the titanium-based amorphous alloy is Te-free, and the titanium-based amorphous alloy is capable of having a reversible phrase change, between a titanium-based amorphous alloy phase and at least one crystalline phase, in response to an applied energy to the titanium-based amorphous alloy. ### Claim 13 (depends on 12) The titanium-based amorphous alloy of claim 12, wherein the titanium-based amorphous alloy includes copper (Cu), both Cu and tin (Sn), or both Cu and silicon (Si), the titanium-based amorphous alloy optionally includes at least one other element (E′), the titanium-based amorphous alloy is represented by Chemical Formula 1A, TiaSbbNicCudSneSifE′g, [Chemical Formula 1A] wherein, in Chemical Formula 1A, a+b+c+d+e+f+g=1, a is in a range from 0.30 to 0.60, b is greater than 0 and less than 0.30, c is greater than 0.07 and less than 0.40, d is greater than 0.20 and less than 0.40, and e, f, and g are each independently greater than or equal to 0. ### Claim 14 (depends on 13) The titanium-based amorphous alloy of claim 13, wherein, in Chemical Formula 1A, a is in a range from 0.35 to 0.57, b is greater than 0 and less than 0.23, c is greater than 0.09 and less than 0.38, d is in a range from 0.22 to 0.37, a+b+c+d is greater than or equal to 0.9, e is 0 if f is greater than 0, f is 0 if e is greater than 0, and g is 0.