Double magnetic tunnel junction device, formed by UVH wafer bonding
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Virat Vasav Mehta
Life of this patent
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Abstract
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack. The first magnetic tunnel junction stack includes a first reference layer. The method also includes forming a second magnetic tunnel junction stack, where the second magnetic tunnel junction stack includes a second reference layer. The method also includes bonding the first magnetic tunnel junction stack to the second magnetic tunnel junction stack with ultra-high vacuum bonding to form the double magnetic tunnel junction device.
Claims10
A method of manufacturing a double magnetic tunnel junction device, the method comprising:
- forming a first magnetic tunnel junction stack, the first magnetic tunnel junction stack including a first reference layer;
- forming a second magnetic tunnel junction stack, the second magnetic tunnel junction stack including a second reference layer;
- and
- wafer bonding the first magnetic tunnel junction stack to the second magnetic tunnel junction stack with ultra-high vacuum (UHV) bonding to form the double magnetic tunnel junction device.
Dependencies are inferred from the claim text.