# US 11,114,584 B2 · Optoelectronic component

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- Number: US 11,114,584 B2
- Document ID: US11114584B2
- Status: Granted
- Kind: B2
- Application number: 16/329,860
- Filed: 2017-08-28
- Published: 2019-08-01
- Granted: 2021-09-07
- Earliest claimed: 2016-09-02
- Assignees: OSRAM OLED GmbH
- Applicants: OSRAM Opto Semiconductors GmbH
- Inventors: Werner Bergbauer; Joachim Hertkorn
- Web page: https://patentgrep.com/patent/US11114584B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H01S 5/3407: {characterised by special barrier layers}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0≤x1<0.03, 0≤y1≤0.1 and x1+y1≤1, and barrier layers including Alx2Iny2Ga1-x2-y2N with 0≤x2≤1, 0≤y2≤0.02 and x2+y2≤1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max≥0.05, and a minimum value of the aluminium content in the barrier layers is x2,min<0.05.

## Claims

### Claim 1

An optoelectronic component comprising an active layer having a multiple quantum well structure, wherein the multiple quantum well structure comprises quantum well layers, comprising Alx1Iny1Ga1-x1-y1N with 0≤x1<0.03, 0≤y1≤0.1 and x1+y1≤1, and barrier layers comprising Alx2Iny2Ga1-x2-y2N with 0≤x2≤1, 0≤y2≤0.02 and x2+y2≤1, the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max≥0.05, a minimum value of the aluminium content in the barrier layers is x2,min<0.05, the multiple quantum well structure is arranged between an n-type semiconductor region and a p-type semiconductor region, an intermediate layer is arranged between a barrier layer and a subsequent quantum well layer in a direction pointing from the n-type semiconductor region to the p-type semiconductor region, the intermediate layer is directly adjacent to the subsequent quantum well layer, and the intermediate layer comprises Alx3Iny3Ga1-x3-y3N with 0≤x3<0.03, 0≤y3≤0.02 and x3+y3≤1.

### Claim 2 (depends on 1)

The optoelectronic component according to claim 1, wherein the intermediate layer is less than 1.5 nm thick.

### Claim 3 (depends on 1)

The optoelectronic component according to claim 1, wherein the barrier layers have the maximum value x2,max of the aluminium content at at least one interface to an adjacent quantum well layer.

### Claim 4 (depends on 1)

The optoelectronic component according to claim 1, wherein the maximum value of the aluminium content in the barrier layers is x2,max≥0.1.

### Claim 5 (depends on 1)

The optoelectronic component according to claim 1, wherein the maximum value of the aluminium content in the barrier layers is x2,max≥0.2.

### Claim 6 (depends on 1)

The optoelectronic component according to claim 1, wherein the aluminium content in the barrier layers decreases from an interface with the layer preceding it in the form of one or more steps or continuously to the minimum value x2,min, and increases from the minimum value in the form of one or more steps or continuously again.

### Claim 7 (depends on 1)

The optoelectronic component according to claim 1, wherein the barrier layers have the minimum value x2,min of the aluminium content in a region having a distance of at least 1 nm from an adjacent quantum well layer.

### Claim 8 (depends on 1)

The optoelectronic component according to claim 1, wherein the minimum value of the aluminium content in the barrier layers is x2,min<0.02.

### Claim 9 (depends on 1)

The optoelectronic component according to claim 1, wherein the minimum value of the aluminium content in the barrier layers is x2,min=0.

### Claim 10 (depends on 1)

The optoelectronic component according to claim 1, wherein the intermediate layer comprises GaN.

### Claim 11 (depends on 1)

The optoelectronic component according to claim 1, wherein the barrier layers each directly adjoin a preceding quantum well layer in a direction pointing from the n-type semiconductor region to the p-type semiconductor region.

### Claim 12 (depends on 1)

The optoelectronic component according to claim 1, wherein the optoelectronic component is adapted to emit UV radiation having a central wavelength of less than 420 nm.

### Claim 13 (depends on 12)

The optoelectronic component according to claim 12, wherein the central wavelength is 365 nm to 400 nm.