# US 11,114,574 B2 · Semiconductor sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,574 B2 - Document ID: US11114574B2 - Status: Granted - Kind: B2 - Application number: 16/624,969 - Filed: 2018-06-13 - Published: 2020-06-04 - Granted: 2021-09-07 - Earliest claimed: 2017-06-20 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Daniel Dietze; Tim Boescke; Wolfgang Zinkl - Web page: https://patentgrep.com/patent/US11114574B2 ## CPC - H10F 77/337: {using interference filters, e.g. multilayer dielectric filters} - A61B 5/02433: {for infrared radiation} - H10F 39/107: {having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays} - H10F 39/805: {Coatings} - H10F 39/8053: {Colour filters} - H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors} - G02B 5/223: {containing organic substances, e.g. dyes, inks or pigments} - G02B 5/282: {reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D) - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle. ## Claims ### Claim 1 A semiconductor sensor comprising: a detector chip that detects radiation of a first wavelength range or green light, an interference filter that optically precedes the detector chip and is permeable to the radiation of the first wavelength range or the green light, and impermeable and reflective to radiation of a second wavelength range or red or near-infrared light, a color filter that optically precedes the interference filter, wherein the color filter has a transparency of at least 60% for the first wavelength range or green light, and absorbs radiation of the second wavelength range or red or near-infrared light, and the semiconductor sensor appears gray or black to an observer in a region of the interference filter independently of the angle, the interference filter comprises at least one refractive index matching layer that delimits the interference filter toward the color filter, and a cast body in which the interference filter and the detector chip are embedded, wherein the cast body contains least one plastic to which at least one filter material is added, and the cast body extends across the interference filter so that the color filter is formed by the part of the cast body extending across the interference filter. ### Claim 2 (depends on 1) The semiconductor sensor according to claim 1, wherein the color filter has an average thickness of 0.1 μm to 5 μm and is based on at least one plastic, and the first wavelength range is the green light and the second wavelength range is the red or near-infrared light. ### Claim 3 (depends on 1) The semiconductor sensor according to claim 1, wherein the cast body extends with a thickness of 0.1 mm to 1 mm across the interference filter. ### Claim 4 (depends on 1) The semiconductor sensor according to claim 1, wherein the color filter comprises one or more of: a cyanine, an azo dye, organometallic complexes, organometallic colloids, and a copper II compound. ### Claim 5 (depends on 1) The semiconductor sensor according to claim 1, wherein the color filter comprises or consists of a metal dielectric filter, and the color filter is thinner than the interference filter. ### Claim 6 (depends on 1) The semiconductor sensor according to claim 1, wherein the interference filter is a high-pass filter that exhibits a cutoff wavelength of 630 nm to 680 nm in a perpendicular incidence of light, and a step width of the transmittance at the cutoff wavelength is 10 nm to 40 nm. ### Claim 7 (depends on 1) The semiconductor sensor according to claim 1, wherein the color filter alone continuously exhibits a transmittance of at least 20% in the wavelength of 600 nm to 1.1 μm. ### Claim 8 (depends on 1) The semiconductor sensor according to claim 1, wherein the interference filter alone appears reddish to an observer and the color filter alone appears green. ### Claim 9 (depends on 1) The semiconductor sensor according to claim 1, wherein the detector chip is a one-channel design and based on silicon, and a detection surface of the detector chip is 0.5×0.5 mm2 to 5×5 mm2. ### Claim 10 (depends on 1) The semiconductor sensor according to claim 1, wherein the interference filter comprises a plurality of alternating layers having a high and low refractive index, and the interference filter alone exhibits an angle-dependent colored reflection. ### Claim 11 (depends on 1) The semiconductor sensor according to claim 1, wherein the interference filter comprises a first layer stack and a second layer stack, the first layer stack exhibits a design wavelength for a reflection of 0.6 μm to 0.9 μm, and the second layer stack exhibits a design wavelength for a reflection of 0.8 μm to 1.1 μm. ### Claim 12 (depends on 1) The semiconductor sensor according to claim 1, wherein the color filter is limited to the interference filter when viewed in plan view. ### Claim 13 (depends on 1) The semiconductor sensor according to claim 1, wherein a gradual refractive index transition in a direction away from the detector chip toward the color filter is achieved by the refractive index matching layer. ### Claim 14 (depends on 1) The semiconductor sensor according to claim 1, wherein the interference filter is applied directly to the detector chip. ### Claim 15 (depends on 1) The semiconductor sensor according to claim 1, wherein said semiconductor sensor is configured for pulse measurement.