Semiconductor device with an oxidized intervention and method for fabricating the same
AssigneeNanya Technology Corporation
InventorChih-Wei Huang
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Abstract
The present application discloses a semiconductor device with an oxidized intervention layer and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a memory unit including a memory unit conductive layer positioned above the substrate and a lateral oxidized intervention layer positioned below the memory unit conductive layer, and a control unit positioned in the substrate and below the lateral oxidized intervention layer. The lateral oxidized intervention layer includes a sidewall portion and a center portion, and the sidewall portion has a greater concentration of oxygen than the center portion.
Claims17
A semiconductor device, comprising:
- a substrate;
- a memory unit comprising a memory unit conductive layer positioned above the substrate, a lateral oxidized intervention layer positioned below the memory unit conductive layer and comprising a sidewall portion and a center portion, and a plurality of memory unit spacers attached to the sidewall portion of the lateral oxidized intervention layer;
- and
- a well region doped with a dopant and disposed in the substrate, wherein a portion of the well region is defined as a control unit positioned in the substrate and below the lateral oxidized intervention layer;
- wherein the sidewall portion of the lateral oxidized intervention layer has a greater concentration of oxygen than the center portion of the lateral oxidized intervention layer.
A semiconductor device, comprising:
- a substrate;
- a memory unit comprising a memory unit conductive layer positioned above the substrate, a lateral oxidized intervention layer positioned on the memory unit conductive layer and comprising a sidewall portion and a center portion, and a plurality of memory unit spacers attached to the sidewall portion of the lateral oxidized intervention layer;
- and
- a polysilicon or polysilicon-germanium layer positioned on the lateral oxidized intervention layer;
- wherein the sidewall portion of the lateral oxidized intervention layer has a higher concentration of oxygen than the center portion of the lateral oxidized intervention layer.
Dependencies are inferred from the claim text.