# US 11,114,562 B2 · Semiconductor device

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- Number: US 11,114,562 B2
- Document ID: US11114562B2
- Status: Granted
- Kind: B2
- Application number: 15/892,373
- Filed: 2018-02-08
- Published: 2019-07-11
- Granted: 2021-09-07
- Earliest claimed: 2018-01-09
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Purakh Raj Verma; Chia-Huei Lin; Kuo-Yuh Yang
- Web page: https://patentgrep.com/patent/US11114562B2

## CPC

- H10D 30/657: {having substrates comprising insulating layers, e.g. SOI-LDMOS transistors}
- H10D 30/0281: {of lateral DMOS [LDMOS] FETs}
- H10D 30/6717: {the source and the drain regions being asymmetrical}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 64/519: {characterised by their top-view geometrical layouts}
- H10D 30/0212: {using self-aligned silicidation}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10P 30/22: using masks
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes: a first gate structure on a substrate; a first drain region having a first conductive type adjacent to one side of the first gate structure; a source region having the first conductive type adjacent to another side of the first gate structure; and a first body implant region having a second conductive type under part of the first gate structure.

## Claims

### Claim 1

A semiconductor device, comprising:
a first gate structure extending along a first direction on a substrate;
a first drain region extending along the first direction on one side of the first gate structure;
a first source region and a second source region adjacent to another side of the first gate structure;
a second gate structure on the substrate and extending along the first direction, wherein the first source region and the second source region are between the first gate structure and the second gate structure, and an edge of the first source region and an edge of the second source region between the first gate structure and the second gate structure are bordered and directly contacted by a shallow trench isolation under a top view;
a first body contact region disposed between the first source region and the second source region; and
a first body implant region extending along the first direction and overlapping part of the first gate structure, wherein a long side of the first body implant region is less than a long side of the first gate structure, wherein bottom surfaces of the first drain region, the first source region, the second source region, the first body contact region and the first body implant region are coplanar, a concentration of the first body contact region is greater than a concentration of the first body implant region, and an edge of the first body contact region is aligned with an edge of the first body implant region under the first gate structure.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, further comprising:
a second drain region extending along the first direction on one side of the second gate structure; and
a second body implant region extending along the first direction and overlapping part of the second gate structure.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein an edge of the second body implant region is aligned with an edge of the second gate structure.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein an edge of the first body implant region is aligned with an edge of the first gate structure.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the first body contact region extends along a second direction between the first source region and the second source region.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the first body contact region comprises a second conductive type.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising a second body contact region disposed between the first source region and the second source region and a third source region disposed between the first body contact region and the second body contact region.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the second body contact region extends along a second direction between the first source region and the third source region.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the first source region and the second source region comprise a first conductive type, the first body contact region and the first body implant region comprise a second conductive type.