Shielded gate trench MOSFET integrated with super barrier rectifier

An integrated circuit comprising a shielded gate trench metal oxide semiconductor transistor (SGT MOSFET) and a super barrier rectifier (SBR) horizontally disposed in two different areas on a single chip, further comprising:

• an epitaxial layer of a first conductivity type extending over a substrate of said first conductivity type, said substrate having a higher doping concentration than said epitaxial layer;
• said SGT MOSFET further comprising:
• a plurality of first type trenches formed in said epitaxial layer, each of said first type trenches being filled with a first shielded electrode and a first gate electrode, said shielded electrode being insulated from said epitaxial layer by a first insulating film, said first gate electrode being insulated from said epitaxial layer by a first gate oxide film, said first shielded electrode and said first gate electrode being insulated from each other;
• a first body region of a second conductivity type having a first source region of said first conductivity type thereon and surrounding said first gate electrode padded by said first gate oxide film;
• said SBR further comprising:
• at least one second type trench formed in parallel with said first type trenches, said second type trench being filled with said a second shielded electrode and a second gate electrode, said second shielded electrode being insulated from said epitaxial layer by a second insulating film, said second gate electrode being insulated from said epitaxial layer by a second gate oxide film, said second shielded electrode and said second gate electrode being insulated from each other;
• said second gate oxide film having a thickness less than said first gate oxide film;
• a second body region of said second conductivity type having a second source region thereon and surrounding said second gate electrode padded by said second gate oxide film;
• said first body region, said second body region, said first and second source regions and said second gate electrode being shorted to a source metal through a plurality of trenched contacts;
• and
• said second body region has a shallower junction depth and a lower doping concentration than said first body region.