Fin field-effect transistor having counter-doped regions between lightly doped regions and doped source/drain regions
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorFei Zhou
Life of this patent
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Abstract
Fin field-effect transistors are provided. A fin field-effect transistor includes a semiconductor substrate; a plurality of fins on the semiconductor substrate; a gate structure across the fins by covering portions of top and side surfaces of the fins, providing portions of the fins under the gate structure as channel regions; lightly doped regions in the fins at both sides of the gate structure; doped source/drain regions in the fins at both sides of the gate structure; and counter doped regions in fins and between the lightly doped regions and the doped source/drain regions.
Claims8
A fin field-effect transistor, comprising:
- a semiconductor substrate;
- a plurality of fins on the semiconductor substrate;
- a gate structure crossing the fins by covering portions of top and side surfaces of the fins, wherein portions of the fins under the gate structure are channel regions;
- lightly doped regions in the fins at both sides of the gate structure;
- doped source/drain regions in the fins at both sides of the gate structure;
- and
- counter doped regions in the fins and between the lightly doped regions and the doped source/drain regions, wherein:
- the counter doped regions are between the lightly doped regions and the doped source/drain regions along a length direction of the fins and a direction perpendicular to the semiconductor substrate.
Dependencies are inferred from the claim text.