# US 11,114,548 B2 · Semiconductor device having source and drain in active region and manufacturing method for same

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- Number: US 11,114,548 B2
- Document ID: US11114548B2
- Status: Granted
- Kind: B2
- Application number: 16/658,446
- Filed: 2019-10-21
- Published: 2020-02-13
- Granted: 2021-09-07
- Earliest claimed: 2017-06-05
- Assignees: Semiconductor Manufacturing (Shanghai) International Corporation; Semiconductor Manufacturing (Beijing) International Corporation
- Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Inventors: Zhenghao Gan; Junhong Feng
- Web page: https://patentgrep.com/patent/US11114548B2

## CPC

- H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
- G11C 11/412: using field-effect transistors only
- G11C 11/419: Read-write [R-W] circuits
- H10B 10/12: {comprising a MOSFET load element}
- H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain}
- H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 62/8325: {Silicon carbide}
- H10D 64/015: {removing at least parts of gate spacers, e.g. disposable spacers}
- H10D 84/013: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 64/021: {using multiple gate spacer layers, e.g. bilayered sidewall spacers}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10P 50/242: {of Group IV materials}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor devices and manufacturing methods for the same. A semiconductor device may include: a substrate; a first active region on the substrate; a first gate structure positioned on the first active region; and a first source and a first drain that are positioned in the first active region and respectively on two sides of the first gate structure, where a size of the first drain is larger than a size of the first source. In forms of the present disclosure, because the size of the first drain is larger than the size of the first source, a current from the first drain to the first source is greater than a current from the first source to the first drain, so that the semiconductor device can make a read current relatively low and a write current relatively high in a static random access memory (SRAM), thereby improving a read margin and a write margin.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a first active region on the substrate;
a first gate structure on the first active region, where the first gate structure comprises a first gate dielectric layer positioned on the first active region, a first gate positioned on the first gate dielectric layer, and a first buffer layer positioned on the first gate;
a first source and a first drain positioned in the first active region, where the first source and the first drain are respectively on two sides of the first gate structure, the first gate structure is not positioned directly above any portion of the first source nor the first drain, and a top surface of the first source is level with and directly next to a bottom surface of the first gate dielectric layer without an intervening structure between the top surface of the first source and the bottom surface of the first gate dielectric layer, where a top surface of the first drain is level with and directly next to the bottom surface of the first gate dielectric layer without an intervening structure between the top surface of the first drain and the bottom surface of the first gate dielectric layer; and
two spacers respectively positioned on side surfaces on two sides of the first gate without contacting surfaces of the first buffer layer, positioned directly above the first gate dielectric layer, and abutting against a top surface of the first gate dielectric layer without covering end top surfaces of the first gate dielectric layer at both ends of the first gate dielectric layer, side surfaces of the two spacers only contacting the first gate;
wherein a size of the first drain is larger than a size of the first source, the size of the first drain comprises a horizontal size of a portion of the first drain exposed on a top surface of the first active region along a channel direction and the size of the first source comprises a horizontal size of a portion of the first source exposed on the top surface of the first active region along the channel direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein,
a conduction type of the first active region is N type, and a material of the first source and a material of the first drain comprises silicon germanium; or
a conduction type of the first active region is P type, and a material of the first source and a material of the first drain comprises silicon carbide.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second active region that is positioned on the substrate and that is spaced from the first active region;
a second gate structure positioned on the second active region; and
a second source and a second drain that are positioned in the second active region and are respectively positioned on two sides of the second gate structure;
wherein a size of the second drain is equal to a size of the second source.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the second gate structure comprises:
a second gate dielectric layer positioned on the second active region, and
a second gate positioned on the second gate dielectric layer.