# US 11,114,541 B2 · Semiconductor device including capacitor

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- Number: US 11,114,541 B2
- Document ID: US11114541B2
- Status: Granted
- Kind: B2
- Application number: 17/035,675
- Filed: 2020-09-28
- Published: 2021-01-14
- Granted: 2021-09-07
- Earliest claimed: 2017-07-07
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sunmin Moon; Young-Lim Park; Kyuho Cho; Hanjin Lim
- Web page: https://patentgrep.com/patent/US11114541B2

## CPC

- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10B 12/033: {the capacitor extending over the transistor}
- H10D 1/716: {having vertical extensions}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/8162: {having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation}
- H10D 64/693: {the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials}
- H10W 10/0128: {comprising multiple local oxidation process steps}
- H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

## Claims

### Claim 1

A semiconductor device, comprising a capacitor including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate,
wherein the dielectric layer comprises a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure,
wherein the capacitor further includes two seed layers respectively disposed between the hafnium oxide layer and one selected from the bottom electrode and the top electrode,
wherein a first one of the two seed layers is an oxidation seed layer, and
wherein a second one of the two seed layers is a conductive seed layer including at least one selected from the group consisting of cobalt, nickel, copper, and cobalt nitride.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the oxidation seed layer includes zirconium oxide, niobium oxide, germanium oxide, tin oxide, molybdenum oxide, or titanium oxide,
wherein the hafnium oxide layer and the oxidation seed layer are in contact with each other.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, further comprising:
a sub-oxide layer between the hafnium oxide layer and the conductive seed layer.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein the sub-oxide layer comprises an oxide of the same metal as that included in the conductive seed layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1,
wherein the conductive seed layer further comprises nitrogen.

### Claim 6 (depends on 1)

The semiconductor device of claim 1,
wherein the conductive seed layer comprises a conductive seed material including a lattice constant having a lattice mismatch of 2% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide.

### Claim 7 (depends on 6)

The semiconductor device of claim 6,
wherein the oxidation seed layer comprises an oxidation seed material including a lattice constant having a lattice mismatch of 6% or less with one of the horizontal lattice constant and the vertical lattice constant of the hafnium oxide.

### Claim 8 (depends on 1)

The semiconductor device of claim 1,
wherein the conductive seed layer has a band gap energy of 3.5 eV or less, and
wherein the conductive seed layer has a work function of 4.7 eV or more.

### Claim 9

A semiconductor device, comprising:
a first electrode;
a dielectric layer disposed on the first electrode, the dielectric layer comprising a hafnium oxide layer and an oxidation seed layer being in contact with each other;
a second electrode disposed on the dielectric layer; and
a conductive seed layer disposed between the second electrode and the hafnium oxide layer,
wherein the hafnium oxide layer includes hafnium oxide having a tetragonal crystal structure, and
wherein the conductive seed layer includes a conductive seed material, the conductive seed material including cobalt, nickel, copper, and cobalt nitride.

### Claim 10 (depends on 9)

The semiconductor device of claim 9,
wherein the conductive seed layer further comprises nitrogen.

### Claim 11 (depends on 9)

The semiconductor device of claim 9, further comprising:
a sub-oxide layer between the hafnium oxide layer and the conductive seed layer,
wherein the sub-oxide layer comprises an oxide of the same metal as that included in the conductive seed layer.

### Claim 12 (depends on 11)

The semiconductor device of claim 11,
wherein the sub-oxide layer has a thickness ranging from 5 Å to 10 Å.

### Claim 13 (depends on 9)

The semiconductor device of claim 9,
wherein the oxidation seed layer is disposed between the first electrode and the hafnium oxide layer.

### Claim 14 (depends on 13)

The semiconductor device of claim 13,
wherein the oxidation seed layer includes niobium oxide, germanium oxide, tin oxide, molybdenum oxide, or titanium oxide.

### Claim 15 (depends on 14)

The semiconductor device of claim 14,
wherein the oxidation seed layer further comprises nitrogen.

### Claim 16 (depends on 13)

The semiconductor device of claim 13,
wherein the oxidation seed layer includes zirconium oxide.

### Claim 17 (depends on 9)

The semiconductor device of claim 9,
wherein the conductive seed material has a band gap energy of 3.5 eV or less, and
wherein the conductive seed material has a work function of 4.7 eV or more.

### Claim 18 (depends on 9)

The semiconductor device of claim 9,
wherein the conductive seed material includes a lattice constant having a lattice mismatch of 2% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide.

### Claim 19 (depends on 18)

The semiconductor device of claim 18,
wherein the oxidation seed layer comprises an oxidation seed material including a lattice constant having a lattice mismatch of 6% or less with one of the horizontal lattice constant and the vertical lattice constant of the hafnium oxide.