Integrated circuit devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHak-yoon Ahn, Sang-hyun Lee, Sung-woo Kang, Hong-sik Shin, Seong-han Oh, Young-mook Oh, In-keun Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.
Claims18
An integrated circuit device comprising:
- a substrate including a fin active region extending in a first direction;
- a gate structure crossing the fin active region and extending in a second direction crossing the first direction;
- source/drain regions on the fin active region at opposite sides of the gate structure;
- a first contact structure electrically connected to one of the source/drain regions, the first contact structure comprising first and second sidewalls opposite each other in the second direction and a third sidewall adjacent the gate structure;
- a pair of first contact block structures on the first and second sidewalls, respectively, of the first contact structure;
- and
- an interlayer insulation layer on the gate structure, the interlayer insulation layer adjacent to the third sidewall of the first contact structure and adjacent to a fourth sidewall of each of the pair of first contact block structures in the first direction,
- wherein at least one of the first contact block structures, in the pair of first contact block structures, has a width in the first direction that is greater than a width of the first contact structure in the first direction.
An integrated circuit device comprising:
- a substrate including a fin active region extending in a first direction;
- a plurality of gate structures crossing the fin active region and extending in a second direction crossing the first direction;
- a source/drain region on the fin active region between adjacent ones of the gate structures;
- a first contact structure on the source/drain region, between the adjacent ones of the gate structures;
- and
- a pair of first contact block structures on opposite sidewalls, respectively, of the first contact structure, between the adjacent ones of the gate structures,
- wherein the pair of first contact block structures are spaced apart from each other in the second direction, and
- wherein at least one of the first contact block structures, in the pair of first contact block structures, has a width in the first direction that is greater than a width of the first contact structure in the first direction.
An integrated circuit device comprising:
- a substrate including a fin active region extending in a first direction;
- a plurality of gate structures crossing the fin active region and extending in a second direction crossing the first direction;
- a source/drain region on the fin active region between two adjacent ones of the gate structures;
- a first contact structure on the source/drain region, between the two adjacent ones of the gate structures;
- a pair of first contact block structures on opposite sidewalls, respectively, of the first contact structure, between the two adjacent ones of the gate structures;
- and
- an interlayer insulation layer on the plurality of gate structures, the interlayer insulation layer contacting the pair of first contact block structures and the first contact structure,
- wherein at least one of the first contact block structures, in the pair of first contact block structures, has a width in the first direction that is greater than a width of the first contact structure in the first direction.
Dependencies are inferred from the claim text.