# US 11,114,525 B2 · Optoelectronic component and method for producing an optoelectronic component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,525 B2 - Document ID: US11114525B2 - Status: Granted - Kind: B2 - Application number: 16/488,548 - Filed: 2018-03-05 - Published: 2020-02-06 - Granted: 2021-09-07 - Earliest claimed: 2017-03-07 - Assignees: OSRAM OLED GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Guido Weiss - Web page: https://patentgrep.com/patent/US11114525B2 ## CPC - H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)} - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/052: {Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions} - H10W 20/042: {the barrier, adhesion or liner layers being seed or nucleation layers} - H10H 20/034: {of coatings} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 20/0425: {comprising multiple stacked seed or nucleation layers} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn. ## Claims ### Claim 1 A method for producing an optoelectronic component, the method comprising: providing a semiconductor layer sequence having an active region for emitting radiation; applying a dielectric layer to the semiconductor layer sequence; applying a seed layer to the dielectric layer, wherein the seed layer comprises a first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, or a ratio of the first metal to the second metal in the seed layer is between 95:5 and 99:1; and applying a solder layer comprising the first metal to the seed layer. ### Claim 2 (depends on 1) The method according to claim 1, wherein the seed layer is reflective for the radiation generated in the active region. ### Claim 3 (depends on 1) The method according to claim 1, wherein the first metal is Au and the second metal is Zn. ### Claim 4 (depends on 1) The method according to claim 1, wherein the second metal is zinc, tin or aluminum. ### Claim 5 (depends on 1) The method according to claim 1, wherein the seed layer is a monolayer layer. ### Claim 6 (depends on 1) The method according to claim 1, wherein the seed layer is free of titanium. ### Claim 7 (depends on 1) The method according to claim 1, wherein the first metal is Au, Ag, Pt or Cu. ### Claim 8 (depends on 1) The method according to claim 1, further comprising: applying a second dielectric layer to the seed layer in a structured manner before applying the solder layer; covering the second dielectric layer with a photoresist layer, wherein the solder layer is applied to the seed layer; exposing the photoresist layer; and removing the photoresist layer so that depressions are formed up to the second dielectric layer or the dielectric layer. ### Claim 9 (depends on 8) The method according to claim 8, wherein the second dielectric layer and regions of the seed layer, which are located below the second dielectric layer, are removed so that the depressions extend to the semiconductor layer sequence and/or an n-contacting and/or a p-contacting. ### Claim 10 An optoelectronic component comprising: a semiconductor layer sequence having an active region configured to emit radiation; a dielectric layer; a solder layer comprising a first metal arranged on the dielectric layer; and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer comprises the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn. ### Claim 11 (depends on 10) The optoelectronic component according to claim 10, wherein the optoelectronic component comprises a plurality of light generation regions, each light generation region having a p-contacting and an n-contacting, and wherein the light generation regions are arranged in a matrix shape. ### Claim 12 (depends on 10) The optoelectronic component according to claim 10, wherein the dielectric layer comprises a material which is selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, zirconium oxide, titanium oxide, yttrium oxide, and silicon. ### Claim 13 (depends on 10) The optoelectronic component according to claim 10, further comprising an n-contacting and a p-contacting, wherein the dielectric layer provides isolation for the two contactings. ### Claim 14 (depends on 10) The optoelectronic component according to claim 10, wherein the seed layer has a layer thickness of between 50 nm and 5000 nm inclusive. ### Claim 15 (depends on 10) The optoelectronic component according to claim 10, wherein the seed layer is reflective for the radiation generated in the active region. ### Claim 16 (depends on 10) The optoelectronic component according to claim 10, wherein the first metal of the solder layer is galvanically deposited. ### Claim 17 (depends on 10) The optoelectronic component according to claim 10, wherein the seed layer is a monolayer layer. ### Claim 18 (depends on 10) The optoelectronic component according to claim 10, wherein the seed layer is free of titanium. ### Claim 19 (depends on 10) An adaptive headlamp comprising: the optoelectronic component according to claim 10. ### Claim 20 An optoelectronic component comprising: a semiconductor layer sequence having an active region configured to emit radiation; a dielectric layer; a solder layer comprising a first metal arranged on the dielectric layer, the solder layer configured to create a bond between the semiconductor layer sequence and an external substrate; and a seed layer arranged between the solder layer and the dielectric layer, the seed layer being directly adjacent to both the solder layer and the dielectric layer so that no further layers are arranged between the solder layer and the seed layer, wherein the seed layer comprises the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.