Imaging device

An imaging device comprising:

• a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region;
• an insulating layer that covers the pixel region and the peripheral region;
• first electrodes located on the insulating layer above the pixel region and arranged two-dimensionally in a column direction and a row direction;
• a photoelectric conversion layer that covers the first electrodes;
• a second electrode that covers the photoelectric conversion layer;
• detection circuitry located in the pixel region and configured to be electrically connected to the first electrodes;
• peripheral circuitry located in the peripheral region, configured to be electrically connected to the detection circuitry, and including analog circuitry and digital circuitry;
• and
• a third electrode located on the insulating layer above the peripheral region, wherein
• the second electrode extends above the peripheral region,
• the second electrode includes a connection region in which the second electrode is connected to third electrode,
• the connection region overlaps the analog circuitry in a plan view, and
• in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the connection region, no transistor of the digital circuitry is located directly below the connection region.