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US 11,114,502 B2Granted
Resistive memory cell having an ovonic threshold switch
AssigneeSTMicroelectronics (Rousset) SAS
InventorPhilippe Boivin
Life of this patent
Estimating the term…
Abstract
The disclosure concerns a resistive memory cell, including a stack of a selector, of a resistive element, and of a layer of phase-change material, the selector having no physical contact with the phase-change material. In one embodiment, the selector is an ovonic threshold switch formed on a conductive track of a metallization level.
Claims20
A resistive memory cell, comprising:
- a phase change layer of phase-change material;
- a resistive element in contact with the phase change material;
- and
- an ovonic threshold switch having no physical contact with the phase-change material, the resistive element being positioned between the ovonic threshold switch and the phase change layer.
1 more element
A memory device comprising:
- an interconnection network that includes levels;
- and
- a plurality of memory cells located between the levels of the interconnection network, the plurality of memory cells including a phase change layer of phase-change material that is shared by each of the memory cells, each memory cell further including:
- a resistive element in contact with the phase change material;
- and
- an ovonic threshold switch having no physical contact with the phase-change material, the resistive element being positioned between the ovonic threshold switch of the memory cell and the phase change layer.
3 more elements
A resistive memory cell, comprising:
- an ovonic threshold selector;
- a layer of phase change material spaced apart from the ovonic threshold selector;
- and
- a resistive element positioned between the ovonic threshold selector and the layer of phase change material and including:
- a first surface in contact with the ovonic threshold selector;
- and
- a second surface in contact with the phase change material, wherein an area of contact between the first surface and the ovonic threshold selector is greater than an area of contact between the second surface and the layer of phase change material.
4 more elements
Dependencies are inferred from the claim text.