# US 11,114,497 B2 · Sensor, array substrate containing sensor, display panel containing array substrate

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- Number: US 11,114,497 B2
- Document ID: US11114497B2
- Status: Granted
- Kind: B2
- Application number: 16/332,932
- Filed: 2018-07-17
- Published: 2019-08-15
- Granted: 2021-09-07
- Earliest claimed: 2017-07-18
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: Boe Technology Group Co., Ltd.
- Inventors: Dongsheng Li; Huili Wu; Qingrong Ren; Shipei Li; Xuefei Sun; Dongsheng Yin
- Web page: https://patentgrep.com/patent/US11114497B2

## CPC

- H10F 39/198: {Contact-type image sensors [CIS]}
- G06V 40/1318: {using electro-optical elements or layers, e.g. electroluminescent sensing}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/10: Integrated devices
- H10F 39/80373: {characterised by the gate of the transistor}
- H10F 39/8057: {Optical shielding}
- H10F 77/206: {for devices having potential barriers}
- H10F 77/334: {for shielding light, e.g. light blocking layers or cold shields for infrared detectors}
- H10F 77/953: {for devices having potential barriers}
- G06V 40/1365: {Matching; Classification}
- H10D 30/6723: {having light shields}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present disclosure generally relates to the field of detection technology. A sensor includes a base substrate; a voltage dividing photodiode on the base substrate; and a detecting photodiode on the base substrate. The voltage dividing photodiode may include a first electrode and a second electrode arranged in a stack. The detecting photodiode may include a third electrode and a fourth electrode arranged in a stack. The voltage dividing photodiode is configured to operate substantially permanently in a dark state. The detecting photodiode is configured to operate with a reverse bias applied by the first power terminal and the second power terminal, so as to detect a light intensity.

## Claims

### Claim 1

A sensor, comprising:
a base substrate;
a voltage dividing photodiode on the base substrate;
a detecting photodiode on the base substrate;
a first power terminal; and
a second power terminal,
wherein:
the voltage dividing photodiode comprises a first electrode, a first P-type semiconductor layer, a first I-type semiconductor layer, a first N-type semiconductor layer, and a second electrode arranged in a stack,
the detecting photodiode comprises a third electrode, a second P-type semiconductor layer, a second I-type semiconductor layer, a second N-type semiconductor layer, and a fourth electrode arranged in a stack,
the second power terminal comprises at least one metal layer,
the first electrode is electrically connected to the first power terminal,
the second electrode and the third electrode form a unitary structure,
the fourth electrode is electrically connected to the second power terminal,
the detecting photodiode is configured to operate with a reverse bias applied by the first power terminal and the second power terminal, so as to detect a light intensity, and
the unitary structure formed by the second electrode and the third electrode is opaque and covers an entirety of the first electrode, the first P-type semiconductor layer, the first I-type semiconductor layer, and the first N-type semiconductor layer of the voltage dividing photodiode, so that the voltage dividing photodiode is configured to operate substantially permanently in a dark state.

### Claim 2 (depends on 1)

The sensor according to claim 1, wherein:
the voltage dividing photodiode and the detecting photodiode are arranged in a stack, and
the voltage dividing photodiode is arranged on a side of the detecting photodiode opposite from a light-detecting surface of the detecting photodiode.

### Claim 3 (depends on 2)

The sensor according to claim 2, wherein:
the second electrode is between the first electrode and the detecting photodiode, and
the third electrode is between the fourth electrode and the voltage dividing photodiode.

### Claim 4 (depends on 2)

The sensor according to claim 2, wherein the detecting photodiode substantially covers the voltage dividing photodiode.

### Claim 5 (depends on 1)

The sensor according to claim 1, wherein the voltage dividing photodiode does not cover the detecting photodiode.

### Claim 6 (depends on 5)

The sensor according to claim 5, wherein a light shielding layer is provided on a light incident side of the voltage dividing photodiode.

### Claim 7 (depends on 6)

The sensor according to claim 6, wherein:
the first electrode and the third electrode are provided on the light incident side of the voltage dividing photodiode and a light incident side of the detecting photodiode, respectively, and
the second electrode and the fourth electrode are provided on a side of the voltage dividing photodiode and the detecting photodiode, respectively, opposite from the light incident side.

### Claim 8 (depends on 7)

The sensor according to claim 7, wherein the light shielding layer is provided on a light incident side of the first electrode.

### Claim 9 (depends on 7)

The sensor according to claim 7, wherein the first electrode is configured as the light shielding layer.

### Claim 10 (depends on 8)

The sensor according to claim 8, wherein at least one of (i) the first electrode and the third electrode are provided in the same layer, and (ii) the second electrode and the fourth electrode are provided in the same layer.

### Claim 11 (depends on 1)

The sensor according to claim 1, further comprising a sensor transistor,
wherein a gate electrode of the sensor transistor is electrically connected to the third electrode.

### Claim 12 (depends on 11)

The sensor according to claim 11, wherein at least one of (i) the gate electrode of the sensor transistor and the third electrode are provided in the same layer, and (ii) the gate electrode of the sensor transistor and the second electrode are provided in the same layer.

### Claim 13 (depends on 11)

The sensor according to claim 11, wherein the sensor transistor is a double gate transistor.

### Claim 14 (depends on 13)

The sensor according to claim 13, wherein:
the double gate transistor comprises a first gate electrode and a second gate electrode,
the first gate electrode is electrically connected to the third electrode, and
the second gate electrode is electrically connected to the first power terminal.

### Claim 15 (depends on 1)

The sensor according to claim 1, further comprising a first switch transistor,
wherein:
a source electrode of the first switch transistor is electrically connected to the second power terminal, and
a drain electrode of the first switch transistor is electrically connected to the fourth electrode.

### Claim 16 (depends on 1)

An array substrate comprising a plurality of the sensors according to claim 1.

### Claim 17 (depends on 16)

A display panel comprising the array substrate according to claim 16.