# US 11,114,487 B2 · Photoelectric conversion apparatus and imaging system using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,487 B2 - Document ID: US11114487B2 - Status: Granted - Kind: B2 - Application number: 16/908,377 - Filed: 2020-06-22 - Published: 2020-10-08 - Granted: 2021-09-07 - Earliest claimed: 2008-05-09 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Masahiro Kobayashi; Yuichiro Yamashita - Web page: https://patentgrep.com/patent/US11114487B2 ## CPC - H10F 39/807: {Pixel isolation structures} - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/8057: {Optical shielding} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors. ## Claims ### Claim 1 A photoelectric conversion apparatus comprising: a first photoelectric conversion portion including a first semiconductor region of a first conductive type; a second photoelectric conversion portion including a second semiconductor region of the first conductive type; a first region where a first storage portion configured to hold a signal based on a charge generated by the first photoelectric conversion portion is arranged; a second region where a second storage portion configured to hold a signal based on a charge generated by the second photoelectric conversion portion is arranged; a first floating diffusion portion arranged at different location from the first storage portion and configured to hold a signal based on a charge generated by the first photoelectric conversion portion; a first electrode arranged in the first region in a plan view; a second electrode arranged in the second region in the plan view; and a first transistor connected to the first floating diffusion portion, the first transistor being one of a reset transistor, an amplification transistor, and a selection transistor, wherein a first element isolation portion using an insulator is arranged between the first transistor and the first photoelectric conversion portion, and wherein the first electrode and the second electrode are arranged on a same active region. ### Claim 2 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the first electrode is disposed so as to overlap with at least a part of the first element isolation portion. ### Claim 3 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the first element isolation portion is arranged between the first transistor and the first electrode in the plan view. ### Claim 4 (depends on 2) The photoelectric conversion apparatus according to claim 2, the same active region is not separated by the first element isolation portion. ### Claim 5 (depends on 4) The photoelectric conversion apparatus according to claim 4, further comprising a first discharging portion configured to discharge a charge generated in the first photoelectric conversion portion and a second discharging portion configured to discharge a charge generated in the second photoelectric conversion portion, wherein the first photoelectric conversion portion and the second photoelectric conversion portion are arranged between the first discharging portion and the second discharging portion in the plan view. ### Claim 6 (depends on 5) The photoelectric conversion apparatus according to claim 5, further comprising a third photoelectric conversion portion including a third semiconductor region of the first conductive type, a third region where a third storage portion configured to hold a signal based on a charge generated by the third photoelectric conversion portion is arranged, a third floating diffusion portion arranged at different location from the third storage portion and configured to hold a signal based on a charge generated by the third photoelectric conversion portion, and a third electrode arranged in the third region in the plan view, wherein the first photoelectric conversion portion and the second photoelectric conversion portion are arranged on a first line along a first direction, wherein the first photoelectric conversion portion and the third photoelectric conversion portion are arranged on a second ling along a second line, the second line being crossing to the first line, and wherein the third electrode is arranged on an another active region different from the same active region. ### Claim 7 (depends on 3) The photoelectric conversion apparatus according to claim 3, further comprising a second floating diffusion portion arranged at different location from the second storage portion and configured to hold a signal based on a charge generated by the second photoelectric conversion portion, and wherein the first floating diffusion region is separated from the second floating diffusion region in the plan view. ### Claim 8 (depends on 6) The photoelectric conversion apparatus according to claim 6, wherein the first element isolation portion is formed in a shallow trench isolation structure. ### Claim 9 (depends on 5) The photoelectric conversion apparatus according to claim 5, wherein the first photoelectric conversion portion and the second photoelectric conversion portion share the first transistor. ### Claim 10 (depends on 9) The photoelectric conversion apparatus according to claim 9, wherein the first region includes a third semiconductor region of the first conductivity type, and the second region includes a fourth semiconductor region of the first conductivity type. ### Claim 11 (depends on 10) The photoelectric conversion apparatus according to claim 10, further comprising wherein a second element isolation portion using a PN junction arranged between the first semiconductor region and the second semiconductor region, and wherein the second element isolation portion does not include an insulator. ### Claim 12 (depends on 1) The photoelectric conversion apparatus according to claim 1, further comprising wherein a second element isolation portion using a PN junction arranged between the first semiconductor region and the second semiconductor region, and wherein the second element isolation portion does not include an insulator. ### Claim 13 (depends on 7) The photoelectric conversion apparatus according to claim 7, further comprising a third photoelectric conversion portion including a third semiconductor region of the first conductive type, a third region where a third storage portion configured to hold a signal based on a charge generated by the third photoelectric conversion portion is arranged, a third floating diffusion portion arranged at different location from the third storage portion and configured to hold a signal based on a charge generated by the third photoelectric conversion portion, and a third electrode arranged in the third region in the plan view, wherein the first photoelectric conversion portion and the second photoelectric conversion portion are arranged on a first line along a first direction, wherein the first photoelectric conversion portion and the third photoelectric conversion portion are arranged on a second line along a second line, the second line being crossing to the first line, and wherein the third electrode is arranged on an another active region different from the same active region. ### Claim 14 (depends on 12) The photoelectric conversion apparatus according to claim 12, further comprising a third photoelectric conversion portion and a fourth photoelectric conversion portion, wherein the first photoelectric conversion portion, the second photoelectric conversion portion, the third photoelectric conversion portion, and the fourth photoelectric conversion portion are arranged in one active region. ### Claim 15 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the first semiconductor region and the first electrode are arranged symmetrically to the second semiconductor region and the second electrode, with reference to a line perpendicular to a line passing through the first and second semiconductor regions, in the plan view. ### Claim 16 (depends on 1) A camera comprising: the photoelectric conversion apparatus according to claim 1; and an A/D converter performing analog-digital conversion of the imaging signals output from the photoelectric conversion apparatus. ### Claim 17 (depends on 10) A camera comprising: the photoelectric conversion apparatus according to claim 10; and an A/D converter performing analog-digital conversion of the imaging signals output from the photoelectric conversion apparatus. ### Claim 18 (depends on 13) A camera comprising: the photoelectric conversion apparatus according to claim 13; and an A/D converter performing analog-digital conversion of the imaging signals output from the photoelectric conversion apparatus. ### Claim 19 (depends on 16) The camera according to claim 16, further comprising a timing generator controlling the timing of the photoelectric conversion apparatus and a memory unit. ### Claim 20 (depends on 17) The camera according to claim 17, further comprising a timing generator controlling the timing of the photoelectric conversion apparatus and a memory unit. ### Claim 21 (depends on 18) The camera according to claim 18, further comprising a timing generator controlling the timing of the photoelectric conversion apparatus and a memory unit. ### Claim 22 (depends on 19) The camera according to claim 19, further comprising an optical system configured to form an image of a subject on the photoelectric conversion apparatus. ### Claim 23 (depends on 20) The camera according to claim 20, further comprising an optical system configured to form an image of a subject on the photoelectric conversion apparatus. ### Claim 24 (depends on 21) The camera according to claim 21, further comprising an optical system configured to form an image of a subject on the photoelectric conversion apparatus. ### Claim 25 A photoelectric conversion apparatus comprising: a first photoelectric conversion portion including a first semiconductor region of a first conductive type; a second photoelectric conversion portion including a second semiconductor region of the first conductive type; a first storage portion configured to hold a signal based on a charge generated by the first photoelectric conversion portion; a second storage portion configured to hold a signal based on a charge generated by the second photoelectric conversion portion; a first floating diffusion portion arranged at different location from the first storage portion and configured to hold a signal based on a charge generated by the first photoelectric conversion portion; a second floating diffusion portion arranged at different location from the second storage portion and configured to hold a signal based on a charge generated by the second photoelectric conversion portion; a first transistor connected to the first floating diffusion portion, the first transistor being one of a reset transistor, an amplification transistor, and a selection transistor; a second transistor connected to the second floating diffusion portion, the second transistor being one of a reset transistor, an amplification transistor, and a selection transistor, an element isolation portion, wherein the element isolation portion has a first element isolation portion using a PN junction arranged between the first semiconductor region and the second semiconductor region, a second element isolation portion using an insulator arranged between the first semiconductor region and the first transistor, and wherein the first element isolation portion does not include an insulator. ### Claim 26 (depends on 25) The photoelectric conversion apparatus according to claim 25, wherein the first transistor is the amplification transistor configured to output a signal based on the charge held by the first storage portion, and wherein the second transistor is the amplification transistor configured to output a signal based on the charge held by the second storage portion. ### Claim 27 (depends on 26) The photoelectric conversion apparatus according to claim 26, wherein the first element isolation portion is arranged between the first photoelectric conversion portion and the first storage portion in the plan view. ### Claim 28 (depends on 27) The photoelectric conversion apparatus according to claim 27, wherein the second element isolation portion is formed in a shallow trench isolation structure. ### Claim 29 (depends on 27) The photoelectric conversion apparatus according to claim 27, further comprising a first selection transistor and a first reset transistor, wherein a portion of the first transistor, a portion of the first selection transistor, and a portion of the first reset transistor are arranged in a first active region. ### Claim 30 (depends on 29) The photoelectric conversion apparatus according to claim 29, further comprising a second selection transistor and a second reset transistor, wherein a portion of the second transistor, a portion of the second selection transistor, and a portion of the second reset transistor are arranged in the first active region. ### Claim 31 (depends on 30) The photoelectric conversion apparatus according to claim 30, further comprising a first transfer transistor controlling transfer of a charge held by the first storage portion, and a second transfer transistor controlling transfer of a charge held by the second storage portion. ### Claim 32 (depends on 30) The photoelectric conversion apparatus according to claim 30, further comprising a first gate electrode of a third transfer transistor, the third transfer transistor controlling transfer of a charge held by the first semiconductor region. ### Claim 33 (depends on 32) The photoelectric conversion apparatus according to claim 32, further comprising a second gate electrode of a fourth transfer transistor controlling transfer of a charge held by the second semiconductor region. ### Claim 34 (depends on 33) The photoelectric conversion apparatus according to claim 33, wherein the first semiconductor region and the first gate electrode are arranged symmetrically to the second semiconductor region and the second gate electrode, with reference to a line perpendicular to a line passing through the first and second semiconductor regions, in a plan view. ### Claim 35 (depends on 34) The photoelectric conversion apparatus according to claim 34, wherein the first gate electrode is disposed so as to cover the first storage portion in the plan view. ### Claim 36 (depends on 35) The photoelectric conversion apparatus according to claim 35, wherein the first gate electrode is extended beyond an outer edge of the first storage portion, in the plan view, and the outer edge of the first storage portion is along a direction in which the first semiconductor region and the first storage portion abut side-by-side. ### Claim 37 (depends on 25) A camera comprising: the photoelectric conversion apparatus according to claim 25; and an A/D converter performing analog-digital conversion of the imaging signals output from the photoelectric conversion apparatus. ### Claim 38 (depends on 37) The camera according to claim 37, further comprising a timing generator controlling the timing of the photoelectric conversion apparatus. ### Claim 39 (depends on 38) The camera according to claim 38, further comprising a memory unit. ### Claim 40 (depends on 39) The camera according to claim 39, further comprising an optical system configured to form an image of a subject on the photoelectric conversion apparatus. ### Claim 41 (depends on 25) The photoelectric conversion apparatus according to claim 25, wherein each of the first transistor and the second transistor is connected to power node. ### Claim 42 (depends on 41) The photoelectric conversion apparatus according to claim 41, wherein the first electrode is disposed so as to overlap the second element isolation portion. ### Claim 43 (depends on 42) The photoelectric conversion apparatus according to claim 42, further comprising a third electrode and a fourth electrode, wherein the third electrode configured to control the electrical connection between the first floating diffusion region and the first storage portion, and wherein the fourth electrode configured to control the electrical connection between the second floating diffusion region and the second storage portion. ### Claim 44 (depends on 43) The photoelectric conversion apparatus according to claim 43, wherein the first transistor is an amplification transistor, wherein the photoelectric conversion apparatus further comprises a selection transistor and a reset transistor, and wherein a portion of the amplification transistor, a portion of the selection transistor, and a portion of the reset transistor are arranged in a first active region. ### Claim 45 (depends on 44) The photoelectric conversion apparatus according to claim 44, further comprising a third photoelectric conversion portion, wherein the first transistor configured to output the signal generated by the first photoelectric conversion portion and a signal based on a charge generated by the third photoelectric conversion portion. ### Claim 46 (depends on 45) The photoelectric conversion apparatus according to claim 45, further comprising a fourth photoelectric conversion portion, wherein the second transistor configured to output the signal generated by the second photoelectric conversion portion and a signal based on a charge generated by the fourth photoelectric conversion portion. ### Claim 47 (depends on 46) The photoelectric conversion apparatus according to claim 46, wherein the first photoelectric conversion portion and the third photoelectric conversion portion share the selection transistor and the reset transistor. ### Claim 48 (depends on 47) The photoelectric conversion apparatus according to claim 47, wherein the first photoelectric conversion portion, the second photoelectric conversion portion, the third photoelectric conversion portion, and the fourth photoelectric conversion portion are arranged in one active region. ### Claim 49 (depends on 48) The photoelectric conversion apparatus according to claim 48, wherein the first semiconductor region and the first electrode are arranged symmetrically to the second semiconductor region and the second electrode, with reference to a line perpendicular to a line passing through the first and second semiconductor regions, in the plan view. ### Claim 50 (depends on 49) A camera comprising: the photoelectric conversion apparatus according to claim 49; and an A/D converter performing analog-digital conversion of the imaging signals output from the photoelectric conversion apparatus. ### Claim 51 (depends on 50) The camera according to claim 50, further comprising a timing generator controlling the timing of the photoelectric conversion apparatus. ### Claim 52 (depends on 51) The camera according to claim 51, further comprising a memory unit. ### Claim 53 (depends on 52) The camera according to claim 52, further comprising an optical system configured to form an image of a subject on the photoelectric conversion apparatus.