Implant isolated devices and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Wen-De Wang, Wen-I Hsu
Life of this patent
Estimating the term…
Abstract
A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the implant isolation region. A gate electrode is disposed over the gate dielectric and an end cap dielectric layer is between the gate dielectric and the gate electrode over the implant isolation region.
Claims20
A device comprising:
- a semiconductor substrate having an active region;
- an implant isolation region surrounding the active region and extending from a top surface of the semiconductor substrate into the semiconductor substrate;
- a gate dielectric layer overlying the active region and at least partially overlying the implant isolation region;
- a gate electrode layer over a portion of the gate dielectric layer;
- an end cap dielectric layer overlying the gate dielectric layer and overlying the implant isolation region, the end cap dielectric layer forming a first end cap dielectric structure and a second end cap dielectric structure;
- and
- a second gate electrode layer on the gate electrode layer, the second gate electrode layer extending a least partially over the first end cap dielectric structure and the second end cap dielectric structure, the gate electrode layer and second gate electrode layer together forming a gate electrode.
A device comprising:
- a substrate having an active region therein;
- an implant isolation region forming a ring around the active region;
- a source region and a drain region having a channel region therebetween, the source region and the drain region being formed within the ring and not overlapping with the implant isolation region;
- and
- a gate structure overlying the channel region, the gate structure have a first side aligned with the source region and a second side aligned with the drain region and having a first end connecting the first side and the second side and a second opposite end connecting the first side and the second side, wherein the gate structure further includes:
- a gate dielectric layer extending a first length in a first direction between the first end and the second end, a first gate electrode layer extending a second length less than the first length in the first direction, and a second gate electrode layer atop the first gate electrode layer, the second gate electrode layer having a third length greater than the second length and less than the first length in the first direction.
A device comprising:
- a semiconductor substrate having an active region;
- an implant isolation region surrounding the active region and extending from a top surface of the semiconductor substrate into the semiconductor substrate;
- a gate dielectric layer over the active region and at least partially over the implant isolation region;
- a first gate electrode layer over a portion of the gate dielectric layer and extending between a first end cap dielectric structure and a second end cap dielectric structure;
- and
- a second gate electrode layer on the first gate electrode layer, the second gate electrode layer extending a least partially over the first end cap dielectric structure and the second end cap dielectric structure.
Dependencies are inferred from the claim text.