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US 11,114,474 B2Granted
Thin film transistor, manufacturing method thereof, array substrate, and display panel
AssigneesBoe Technology Group Co., Ltd., Beijing Boe Display Technology Co., Ltd.
InventorLianjie Qu
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Abstract
A thin film transistor (TFT), a manufacturing method thereof, an array substrate and a display panel are disclosed. The manufacturing method includes: providing a base substrate; forming a first electrode, an isolating layer, an active layer and a gate insulating layer on the base substrate; simultaneously forming a second electrode and a gate electrode, wherein the second electrode is connected to the active layer.
Claims20
A manufacturing method of a thin film transistor (TFT), comprising:
- providing a base substrate;
- forming a first electrode, an isolating layer, an active layer and a gate insulating layer on the base substrate;
- simultaneously forming a second electrode and a gate electrode,
- wherein the second electrode is connected to the active layer.
1 more element
A thin film transistor (TFT), comprising:
- a first electrode on a base substrate;
- an isolating layer on the first electrode;
- an active layer connected to the first electrode;
- a gate insulating layer configured to cover at least part of the active layer;
- a second electrode electrically connected to the active layer;
- and
- a gate electrode on the gate insulating layer, the gate electrode and the second electrode being in a same layer.
4 more elements
The TFT according to, wherein
- an orthographic projection of the isolating layer on the base substrate has a width smaller than a width of an orthographic projection of the first electrode on the base substrate, a side of the isolating layer adjacent to the active layer exposes a part of a surface of the first electrode, and the active layer is connected to the part of the surface of the first electrode which is exposed.
Dependencies are inferred from the claim text.