# US 11,114,472 B2 · Thin film transistor panel, display device, and method of manufacturing the thin film transistor panel

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- Number: US 11,114,472 B2
- Document ID: US11114472B2
- Status: Granted
- Kind: B2
- Application number: 16/653,916
- Filed: 2019-10-15
- Published: 2020-06-25
- Granted: 2021-09-07
- Earliest claimed: 2018-12-20
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Byeong Beom Kim; Heon Sik Ha; Jin Ho Hwang
- Web page: https://patentgrep.com/patent/US11114472B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/425: {having different crystal properties in different TFTs or within an individual TFT}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A transistor panel may include a substrate, a transistor, a first inorganic buffer layer, and an inorganic fluorine-containing buffer layer. The transistor may overlap the substrate and may include a semiconductor layer. The first inorganic buffer layer may be disposed between the substrate and the semiconductor layer. The inorganic fluorine-containing buffer layer may be disposed between the first inorganic buffer layer and the semiconductor layer and may contain fluorine in a range of 0.5 at % to 2 at %.

## Claims

### Claim 1

A transistor panel comprising:
a substrate;
a transistor overlapping the substrate and comprising a semiconductor layer;
a first inorganic buffer layer disposed between the substrate and the semiconductor layer;
an inorganic fluorine-containing buffer layer disposed between the first inorganic buffer layer and the semiconductor layer, directly contacting the semiconductor layer, and containing fluorine in a range of 0.5 at % to 2 at %; and
a second inorganic buffer layer interposed between the first inorganic buffer layer and the inorganic fluorine-containing buffer layer,
wherein at least one of the first inorganic buffer layer and the second inorganic buffer layer contains fluorine, and
wherein each of a content of fluorine contained in the first inorganic buffer layer and a content of fluorine contained in the second inorganic buffer layer is less than a content of fluorine contained in the inorganic fluorine-containing buffer layer.

### Claim 2 (depends on 1)

The transistor panel of claim 1, wherein the first inorganic buffer layer includes a silicon nitride film.

### Claim 3 (depends on 2)

The transistor panel of claim 2, wherein the second inorganic buffer layer includes a silicon oxide film.

### Claim 4 (depends on 3)

The transistor panel of claim 3, wherein the first inorganic buffer layer is disposed directly on one surface of the substrate.

### Claim 5

A transistor panel comprising:
a substrate;
a transistor overlapping the substrate and comprising a semiconductor layer;
a first inorganic buffer layer disposed between the substrate and the semiconductor layer; and
an inorganic fluorine-containing buffer layer disposed between the first inorganic buffer layer and the semiconductor layer, directly contacting the semiconductor layer, and containing fluorine in a range of 0.5 at % to 2 at %, wherein a concentration of the fluorine in the inorganic fluorine-containing buffer layer decreases from a center of the inorganic fluorine-containing buffer layer toward at least one of the substrate and the semiconductor layer in a thickness direction.

### Claim 6 (depends on 1)

The transistor panel of claim 1, wherein the inorganic fluorine-containing buffer layer includes SiOF or SiNF.

### Claim 7 (depends on 1)

The transistor panel of claim 1, wherein the semiconductor layer includes polycrystalline silicon.

### Claim 8 (depends on 1)

The transistor panel of claim 1, wherein the substrate includes glass containing an alkali metal oxide component.

### Claim 9

A display device comprising:
a substrate;
a silicon nitride film disposed on the substrate;
a first silicon oxide film disposed on the silicon nitride film;
a fluorine-containing inorganic film disposed on the first silicon oxide film, containing fluorine in a range of 0.5 at % to 2 at %, and including SiOF or SiNF; and
a silicon film disposed directly on the fluorine-containing inorganic film, wherein the fluorine-containing inorganic film is disposed between the silicon film and the first silicon oxide film,
wherein at least one of the silicon nitride film and the first silicon oxide film contains fluorine, and
wherein each of a content of fluorine contained in the silicon nitride film and a content of fluorine contained in the first silicon oxide film is less than a content of fluorine contained in the fluorine-containing inorganic film.

### Claim 10 (depends on 9)

The display device of claim 9, wherein the silicon film includes polycrystalline silicon, and wherein the substrate includes glass containing an alkali metal oxide component.

### Claim 11 (depends on 9)

The display device of claim 9, wherein among the silicon nitride film, the first silicon oxide film, and the fluorine-containing inorganic film, the fluorine-containing inorganic film has a maximum content of fluorine.

### Claim 12

A method of manufacturing a thin film transistor panel, the method comprising:
forming a first inorganic buffer layer on a substrate;
forming an inorganic fluorine-containing buffer layer on the first inorganic buffer layer, wherein the inorganic fluorine-containing buffer layer contains fluorine in a range of 0.5 at % to 2 at %;
forming a semiconductor layer directly on the inorganic fluorine-containing buffer layer; and
forming a second inorganic buffer layer after forming the first inorganic buffer layer and before forming the inorganic fluorine-containing buffer layer,
wherein the inorganic fluorine-containing buffer layer is disposed between the second inorganic buffer layer and the semiconductor layer,
wherein at least one of the first inorganic buffer layer and the second inorganic buffer layer contains fluorine, and
wherein each of a content of fluorine contained in the first inorganic buffer layer and a content of fluorine contained in the second inorganic buffer layer is less than a content of fluorine contained in the inorganic fluorine-containing buffer layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein the first inorganic buffer layer includes a silicon nitride film, and wherein the second inorganic buffer layer includes a silicon oxide film.

### Claim 14 (depends on 13)

The method of claim 13, wherein the step of forming the inorganic fluorine-containing buffer layer comprises forming a film using a reaction gas containing SiF4 and SiH4.

### Claim 15 (depends on 14)

The method of claim 14, wherein the step of forming the second inorganic buffer layer and the step of forming the inorganic fluorine-containing buffer layer are performed in the same chamber.

### Claim 16 (depends on 12)

The method of claim 12, wherein the step of forming the semiconductor layer comprises: forming an amorphous silicon layer on the inorganic fluorine-containing buffer layer, and crystallizing the amorphous silicon layer to form a polycrystalline silicon layer.