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US 11,114,464 B2Granted
3D semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Jin-Woo Han
Life of this patent
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Abstract
A 3D device, the device including: a first level including logic circuits; a second level including a plurality of dynamic memory cells; and a third level including a plurality of non-volatile memory cells, where the first level is bonded to the second level, and where the device includes refresh circuits to refresh the dynamic memory cells.
Claims20
A 3D device, the device comprising:
- a first level comprising logic circuits;
- a second level comprising a plurality of volatile memory cells;
- and
- a third level comprising a plurality of non-volatile memory cells,
- wherein said first level is bonded to said second level.
2 more elements
A 3D device, the device comprising:
- a first level comprising logic circuits;
- a second level comprising a plurality of dynamic memory cells;
- and
- a third level comprising a plurality of non-volatile memory cells,
- wherein said first level is bonded to said second level, and
- wherein said device comprises refresh circuits to refresh said dynamic memory cells.
3 more elements
A 3D device, the device comprising:
- a first level comprising logic circuits;
- a second level comprising a plurality of high speed memory cells;
- and
- a third level comprising a plurality of high density memory cells,
- wherein said first level is bonded to said second level, and
- wherein said device comprises control circuits to store more than one bit per cell in said high density memory cells.
3 more elements
Dependencies are inferred from the claim text.